X-On Electronics has gained recognition as a prominent supplier of DTD113ZUT106 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTD113ZUT106 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTD113ZUT106 ROHM

Hot DTD113ZUT106 electronic component of ROHM
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Part No.DTD113ZUT106
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased NPN 50V 500MA
Datasheet: DTD113ZUT106 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1251 ea
Line Total: USD 0.63

Availability - 1488
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1488
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ : 5
Multiples : 5
5 : USD 0.1251
50 : USD 0.0898
150 : USD 0.0684
500 : USD 0.0619
3000 : USD 0.0569
6000 : USD 0.0543

31044
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.437
10 : USD 0.3784
100 : USD 0.2668
500 : USD 0.2139
1000 : USD 0.1794
3000 : USD 0.1472
45000 : USD 0.1438

20151
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 288
Multiples : 1
288 : USD 0.6093
500 : USD 0.5637
1000 : USD 0.5453
2500 : USD 0.5292
5000 : USD 0.5149
10000 : USD 0.5023

37349
Ship by Tue. 23 Jul to Mon. 29 Jul
MOQ : 196
Multiples : 1
196 : USD 0.208
214 : USD 0.1902
500 : USD 0.1625
1000 : USD 0.1555
2000 : USD 0.1451
3000 : USD 0.1442
6000 : USD 0.1364
12000 : USD 0.1253

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Brand
Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
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We are delighted to provide the DTD113ZUT106 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTD113ZUT106 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTD113ZU 500mA/50V Digital transistor (with built-in resistors) Datasheet llOutline Parameter Value SOT-323 V 50V CC SC-70 I 500mA C R 1k 1 R 10k (UMT3) 2 llFeatures llInner circuit 1) Built-In Biasing Resistors, R = 1k, R = 10k 1 2 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design easy. 4) Complementary PNP Type: DTB113ZU llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 DTD113ZU 2021 T106 180 8 3000 G21 (UMT3) www.rohm.com 1/5 20160303 - Rev.003 2016 ROHM Co., Ltd. All rights reserved. DTD113ZU Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage 50 V CC V Input voltage -5 to 10 V IN *1 I Collector current 500 mA C *2 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.3 I(off) CC O Input voltage V V V = 0.3V, I = 20mA 1.5 - - I(on) O O V Output voltage I = 50mA, I = 2.5mA - 100 300 mV O(on) O I I Input current V = 5V - - 7.2 mA I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I *3 G DC current gain V = 5V, I = 50mA 82 - - - I O O R Input resistance - 0.7 1 1.3 k 1 R /R Resistance ratio - 8 10 12 - 2 1 V = 10V, I = -50mA, CE E *1 f Transition frequency - 200 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land *3 Pulsed www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 20160303 - Rev.003

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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