X-On Electronics has gained recognition as a prominent supplier of DTD114GKT146 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTD114GKT146 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTD114GKT146 ROHM

Hot DTD114GKT146 electronic component of ROHM
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Part No.DTD114GKT146
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased NPN 50V 500MA
Datasheet: DTD114GKT146 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1182 ea
Line Total: USD 0.12

Availability - 39
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
39
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 0.1182
10 : USD 0.0772
30 : USD 0.038
100 : USD 0.0375

28
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.5049
10 : USD 0.4105
100 : USD 0.215
1000 : USD 0.1656
3000 : USD 0.1461
9000 : USD 0.1392
24000 : USD 0.1334
45000 : USD 0.1323

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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We are delighted to provide the DTD114GKT146 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTD114GKT146 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTD114GK Datasheet NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline SMT3 Parameter Value Collector V 50V CEO Base I 500mA C Emitter R 10k W DTD114GK SOT-346 (SC-59) lFeatures lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Complementary PNP Types :DTB114GK 5) Lead Free/RoHS Compliant. lApplication Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) DTD114GK SMT3 2928 T146 180 8 3,000 L24 www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.11 - Rev.C 1/4Data Sheet DTD114GK lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V 50 V Collector-emitter voltage CEO V 5 V Emitter-base voltage EBO I 500 mA Collector current C *2 200 mW Power dissipation P d T 150 C Junction temperature j T Range of storage temperature -55 to +150 C stg lElectrical characteristics(Ta = 25C) Parameter Symbol Conditions Min. Typ. Max. Unit Collector-base breakdown voltage BV I = 50mA 50 - - V CBO C BV I = 1mA Collector-emitter breakdown voltage 50 - - V C CEO BV I = 720mA Emitter-base breakdown voltage 5 - - V EBO E I V = 50V Collector cut-off current - - 0.5 mA CBO CB V = 4V Emitter cut-off current I 300 - 580 EB mA EBO I / I = 50mA / 2.5mA Collector-emitter saturation voltage V - - 0.3 V C B CE(sat) h V = 5V , I = 50mA DC current gain 56 - - - CE C FE - Emitter-base resistance R 7 10 13 k W V = 10V, I = -5mA, *1 CE E Transition frequency f - 200 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.11 - Rev.C 2/4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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