DTD123EC NPN 500mA 50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet llOutline Parameter Value SOT-23 V 50V CC I 500mA C(MAX.) R 2.2k 1 R 2.2k (SST3) 2 llFeatures llInner circuit 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.(see equivalent circuit) 2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3)Only the on/off conditions need to be set for operation, making the device desigh easy. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 DTD123EC 2924 T116 180 8 3000 F22 (SST3) www.rohm.com 1/5 20151208 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. DTD123EC Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage 50 V CC V Input voltage -10 to 12 V IN *1 I Collector current 500 mA C(MAX) *2 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 20mA 3.0 - - I(on) O O V Output voltage I = 50mA, I = 2.5mA - 100 300 mV O(on) O I I Input current V = 5V - - 3.8 mA I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G DC current gain V = 5V, I = 50mA 39 - - - I O O R Input resistance - 1.54 2.2 2.86 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = 10V, I = -50mA, CE E *1 f Transition frequency - 200 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/5 20151208 - Rev.001