X-On Electronics has gained recognition as a prominent supplier of DTD143TKT146 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTD143TKT146 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTD143TKT146 ROHM

DTD143TKT146 electronic component of ROHM
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Part No.DTD143TKT146
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased NPN 50V 500MA
Datasheet: DTD143TKT146 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
250: USD 0.1573 ea
Line Total: USD 39.32 
Availability - 7345
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ: 250  Multiples: 1
Pack Size: 1
Availability Price Quantity
2900
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 261
Multiples : 1
261 : USD 0.3789
500 : USD 0.3651
1000 : USD 0.3532
2500 : USD 0.3428

7345
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 250
Multiples : 1
250 : USD 0.1573
500 : USD 0.1351
1000 : USD 0.1282
2000 : USD 0.1197
6000 : USD 0.1125

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DTD143TKT146 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTD143TKT146 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTD143TK 500mA/40V Digital transistor (with built-in resistor) Datasheet llOutline Parameter Value SOT-346 V 40V CEO SC-59 I 500mA C R 4.7k 1 (SMT3) llFeatures llInner circuit 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.(see equivalent circuit) 2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3)Only the on/off conditions need to be set for operation, making the device desigh easy. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-346 DTD143TK 2928 T146 180 8 3000 F03 (SMT3) www.rohm.com 1/4 20150824 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs DTD143TK Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 40 V CEO V Emitter-base voltage 5 V EBO *1 I Collector current 500 mA C *2 P Power dissipation 200 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 40 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E I V = 50V Collector cut-off current - - 500 nA CBO CB I V = 4V Emitter cut-off current - - 500 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 2.5mA - - 300 mV CE(sat) C B *3 h V = 5V, I = 50mA DC current gain 100 250 600 - FE CE C R Input resistance - 3.29 4.7 6.11 k 1 V = 10V, I = -50mA, CE E *1 f Transition frequency - 200 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/4 2015 ROHM Co., Ltd. All rights reserved. 20150824 - Rev.002 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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