DTD513Z series 500mA/12V Low V Digital transistor (with built-in resistor) Datasheet CE(sat) llOutline Parameter Value SOT-723 SOT-416 V 12V CC I 500mA C(MAX.) R 1k DTD513ZM DTD513ZE 1 R 10k (VMT3) (EMT3) 2 llFeatures 1)V is lower than conventional products. CE(sat) 2)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3)The bias resistors consist of thin-film resistors with complete isolation to allow negative. biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. llApplication INVERTER, INTERFACE, DRIVER llInner circuit DTD513ZM DTD513ZE llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 DTD513ZM 1212 T2L 180 8 8000 Y21 (VMT3) SOT-416 DTD513ZE 1616 TL 180 8 3000 Y21 (EMT3) www.rohm.com 1/6 20151030 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. DTD513Z series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage 12 V CC Input voltage V -5 to 10 V IN *1 Collector current I 500 mA C(MAX) DTD513ZM 150 *2 Power dissipation P mW D DTD513ZE 150 Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.3 I(off) CC O Input voltage V V V = 0.3V, I = 20mA 2.5 - - I(on) O O V Output voltage I = 100mA, I = 5mA - 60 300 mV O(on) O I I Input current V = 5V - - 6.4 mA I I I Output current V = 12V, V = 0V - - 500 nA O(off) CC I G DC current gain V = 2V, I = 100mA 140 - - - I O O R Input resistance - 0.7 1 1.3 k 1 R /R Resistance ratio - 8 10 12 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 260 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20151030 - Rev.002