DTD523Y series 500mA/12V Low V Digital transistor (with built-in resistor) Datasheet CE(sat) llOutline Parameter Value SOT-723 SOT-416 V 12V CC I 500mA C(MAX.) R 2.2k DTD523YM DTD523YE 1 R 10k (VMT3) (EMT3) 2 llFeatures 1)V is lower than conventional products. CE(sat) 2)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. llApplication INVERTER, INTERFACE, DRIVER llInner circuit DTD523YM DTD523YE llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 DTD523YM 1212 T2L 180 8 8000 X62 (VMT3) SOT-416 DTD523YE 1616 TL 180 8 3000 X62 (EMT3) www.rohm.com 1/6 20151020 - Rev.003 2015 ROHM Co., Ltd. All rights reserved. DTD523Y series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage 12 V CC Input voltage V -5 to 12 V IN *1 Collector current I 500 mA C(MAX) DTD523YM 150 *2 Power dissipation P mW D DTD523YE 150 Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.3 I(off) CC O Input voltage V V V = 0.3V, I = 20mA 2.5 - - I(on) O O V Output voltage I = 100mA, I = 5mA - 60 300 mV O(on) O I I Input current V = 5V - - 3.0 mA I I I Output current V = 12V, V = 0V - - 500 nA O(off) CC I G DC current gain V = 2V, I = 100mA 140 - - - I O O R Input resistance - 1.54 2.2 2.86 k 1 R /R Resistance ratio - 3.6 4.5 5.5 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 260 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20151020 - Rev.003