DTD543E series Datasheet 500mA/12V Low V Digital transistors (with built-in resistors) CE(sat) llOutline Parameter Value SOT-723 SOT-416 V 12V CC I 500mA C(MAX.) R 4.7k DTD543EM DTD543EE 1 R (VMT3) (EMT3) 4.7k 2 llFeatures 1)V is lower than conventional products. CE(sat) 2)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. llApplication INVERTER, INTERFACE, DRIVER llInner circuit DTD543EM DTD543EE llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-723 DTD543EM 1212 T2L 180 8 8000 X23 (VMT3) SOT-416 DTD543EE 1616 TL 180 8 3000 X23 (EMT3) www.rohm.com 1/6 20151110 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. DTD543E series Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage 12 V CC Input voltage V -10 to 12 V IN *1 Collector current I 500 mA C(MAX) DTD543EM 150 *2 Power dissipation P mW D DTD543EE 150 Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 20mA 2.5 - - I(on) O O V Output voltage I = 100mA, I = 5mA - 60 300 mV O(on) O I I Input current V = 5V - - 1.4 mA I I I Output current V = 12V, V = 0V - - 500 nA O(off) CC I G DC current gain V = 2V, I = 100mA 115 - - - I O O R Input resistance - 3.29 4.7 6.11 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 260 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20151110 - Rev.002