X-On Electronics has gained recognition as a prominent supplier of DTD743ZETL Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DTD743ZETL Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DTD743ZETL ROHM

DTD743ZETL electronic component of ROHM
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See Product Specifications
Part No. DTD743ZETL
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased TRANSISTOR
Datasheet: DTD743ZETL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1035 ea
Line Total: USD 310.5 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 12 Sep to Mon. 16 Sep
MOQ : 3000
Multiples : 3000
3000 : USD 0.1035
9000 : USD 0.0909
45000 : USD 0.0897
99000 : USD 0.0885

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Maximum Operating Frequency
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Output Voltage
Channel Mode
Cnhts
Hts Code
Maximum Dc Collector Current
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
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We are delighted to provide the DTD743ZETL from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DTD743ZETL and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DTD743Z series Datasheet NPN 500mA 12V Digital Transistors (Bias Resistor Built-in Transistors) lOutline VMT3 EMT3 Parameter Value OUT OUT V 30V CC IN I IN 200mA C(MAX.) GND GND R 4.7k W 1 DTD743ZM DTD743ZE R 47k W (SC-105AA) SOT-416 (SC-75A) 2 lFeatures 1) Built-In Biasing Resistors lInner circuit 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary PNP Types :DTB743Z series 6) Lead Free/RoHS Compliant. l Application Switching circuit, Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) DTD743ZM VMT3 1212 T2L 180 8 8,000 P23 DTD743ZE EMT3 1616 TL 180 8 3,000 P23 www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.08 - Rev.B 1/6Data Sheet DTD743Z series lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit V Supply voltage 30 V CC V V Input voltage -5 to +20 IN *1 200 mA Collector current I C(MAX.) *2 150 mW Power dissipation P D T 150 C Junction temperature j T C Range of storage temperature -55 to +150 stg lElectrical characteristics(Ta = 25C) Parameter Symbol Conditions Min. Typ. Max. Unit V V = 5V, I = 100mA - - 0.3 I(off) CC O Input voltage V V = 0.3V, I = 20mA V 2.5 - - O O I(on) V I / I = 50mA / 2.5mA Output voltage - 0.07 0.3 V O I O(on) I V = 5V Input current - - 1.4 mA I I I V = 30V, V = 0V Output current - - 0.5 mA O(off) CC I V = 2V, I = 100mA DC current gain G 140 - - - O O I Input resistance R - 3.29 4.7 6.11 k W 1 R /R Resistance ratio - 8 10 12 - 2 1 V = 10V, I = -5mA, *1 CE E Transition frequency f - 260 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.08 - Rev.B 2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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