DTDG23YPT100 ROHM

DTDG23YP 1A/60V Digital Transistor (with built-in resistor and zener diode) Datasheet llOutline Parameter Value SOT-89 V 6010V CC SC-62 I 1A C R 2.2k 1 R 10k (MPT3) 2 llFeatures llInner circuit 1)High DC current gain. (Min.300 at Vo/Io=2V/0.5A) 2)Low Vo( ). ON (Typ.400mV at Io/I =500mA/5mA) I 3)Built-in zener diode gives strong protection against reverse surge by L-load. (an inductive load) llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-89 DTDG23YP 4540 T100 180 12 1000 E02 (MPT3) www.rohm.com 1/4 20181225 - Rev.002 2018 ROHM Co., Ltd. All rights reserved. DTDG23YP Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Supply voltage 6010 V CC Input voltage V -6 to 40 V IN I 1 A C Collector current *1 I 2 A CP *2 Power dissipation P 1.5 W D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.3 I(off) CC O Input voltage V V V = 0.4V, I = 100mA 2.0 - - I(on) O O Output voltage V I = 500mA, I = 5mA - - 400 mV O(on) O I Input current I V = 5V - - 3.6 mA I I Output current I V = 40V, V = 0V - - 500 nA O(off) CC I G DC current gain V = 2V, I = 500mA 300 - - - I O O R Input resistance - 1.54 2.2 2.86 k 1 R Emitter-base resistance - 7 10 13 k 2 V = 5V, I = -100mA, CE E *3 f Transition frequency - 80 - MHz T f = 30MHz *1 Pw10msec. duty1/2 *2 Mounted on a ceramic board.(40400.7mm) *3 Characteristics of built-in transistor www.rohm.com 2018 ROHM Co., Ltd. All rights reserved. 2/4 20181225 - Rev.002