EMB51 General purpose (dual digital transistor) Datasheet llOutline Parameter DTr1 and DTr2 SOT-563 V -50V CC SC-107C I -100mA C(MAX.) R 22k 1 R EMT6 22k 2 llFeatures llInner circuit 1)Two DTA024E chips in a EMT package. 2)Mounting possible with EMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication SWITCHING CIRCUIT, INVERTER CIRCUIT, INTERFACE CIRCUIT DRIVER CIRCUIT llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMB51 1616 T2R 180 8 8000 B51 (EMT6) www.rohm.com 1/5 20160119 - Rev.004 2016 ROHM Co., Ltd. All rights reserved. EMB51 Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage -50 V CC V Input voltage -40 to 10 V IN I Output current -30 mA O *1 I Collector current -100 mA C(MAX) *2*3 P Power dissipation 150 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -5mA -3.0 - - I(on) O O V Output voltage I = -5mA, I = -0.5mA - -70 -150 mV O(on) O I I Input current V = -5V - - -360 A I I I Output current V = -50V, V = 0V - - -500 nA O(off) CC I G DC current gain V = -10V, I = -5mA 60 - - - I O O R Input resistance - 15.4 22 28.6 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 20160119 - Rev.004