EMD5T2R ROHM

EMD5 / UMD5N Datasheet General purpose (dual digital transistor) <For DTr1(NPN)> llOutline Parameter Value SOT-563 SOT-363 V 50V CC I 100mA C(MAX.) R 47k 1 EMD5 UMD5N R (EMT6) (UMT6) 47k 2 <For DTr2(PNP)> Parameter Value V -50V CC I -100mA C(MAX.) R 4.7k 1 R 10k 2 llFeatures llInner circuit 1)Both the DTA143X chip and DTC144E chip in an EMT6 or UMT6 package. 2)Mounting possible with EMT3 or UMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMD5 1616 T2R 180 8 8000 D5 (EMT6) SOT-363 UMD5N 2021 TR 180 8 3000 D5 (UMT6) www.rohm.com 1/8 20151214 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMD5 / UMD5N Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol DTr1(NPN) DTr2(PNP) Unit Supply voltage V 50 -50 V CC V Input voltage -10 to 40 -20 to 7 V IN I Output current 30 -100 mA O *1 I Collector current 100 -100 mA C(MAX) *2*3 P Power dissipation EMD5/ UMD5N 150 mW/Total D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) <For DTr1(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 2mA 3.0 - - I(on) O O V I = 10mA, I = 0.5mA Output voltage - 100 300 mV O(on) O I I V = 5V Input current - - 180 A I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G V = 5V, I = 5mA DC current gain 68 - - - I O O R Input resistance - 32.9 47 61.1 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz llElectrical characteristics (T = 25C) <For DTr2(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.3 I(off) CC O Input voltage V V V = -0.3V, I = -20mA -2.5 - - I(on) O O V Output voltage I = -10mA, I = -0.5mA - -100 -300 mV O(on) O I I Input current V = -5V - - -1.8 mA I I I Output current V = -50V, V = 0V - - -500 nA O(off) CC I G V = -5V, I = -10mA DC current gain 30 - - - I O O R Input resistance - 3.29 4.7 6.11 k 1 R /R Resistance ratio - 1.7 2.1 2.6 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/8 20151214 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.