EMF21 / UMF21N Transistors Power management (dual transistors) EMF21 / UMF21N 2SA2018 and DTC114E are housed independently in a EMT6 or UMT6 package. zz zz External dimensions (Units : mm) z z Application z z Power management circuit EMF21 ( ) (4) 3 (5) (2) (6) (1) zz zz Features 1.2 1.6 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. Each lead has same dimensions ROHM : EMT6 Abbreviated symbol : F21 zz zz Structure UMF21N Silicon epitaxial planar transistor zz zz Equivalent circuits 1.25 (3) (2) (1) 2.1 0.1Min. DTr2 Tr1 R1 Each lead has same dimensions R2 ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol :F21 (4) (5) (6) R1=10k R2=10k zz zz Package, marking, and packaging specifications Type EMF21 UMF21N Package UMT6 EMT6 Marking F21 F21 Code TR T2R 8000 Basic ordering unit(pieces) 3000 1/4 0.2 0.15 0.13 0.22 (5) (4) (6) 0 to 0.1 ( ) (1) 3 0.5 0.5 ( ) 2 1.0 0.5 0.65 0.65 1.6 0.7 0.9 1.3 2.0EMF21 / UMF21N Transistors zz zz Absolute maximum ratings (Ta=25C) Tr1 Parameter Symbol Limits Unit Collector-base voltage VCBO 15 V VCEO 12 V Collector-emitter voltage Emitter-base voltage VEBO 6 V IC 500 mA Collector current 1 ICP 1.0 A 2 Power dissipation PC 150(TOTAL) mW Junction temperature Tj 150 C Range of storage temperature Tstg 55~+150 C 1 Single pulse PW=1ms 2 120mW per element must not be exceeded. Each terminal mounted on a recommended land. DTr2 Parameter Symbol Limits Unit VCC 50 V Supply voltage Input voltage VIN 10~+40 V 1 Collector current IC 100 mA Output current IO 50 mA 2 Power dissipation PC 150(TOTAL) mW Junction temperature Tj 150 C Range of storage temperature Tstg 55~+150 C 1 Characteristics of built-in transistor. 2 Each terminal mounted on a recommended land. zz zz Electrical characteristics (Ta=25C) Tr1 Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BVCEO 12 V IC=1mA Collector-base breakdown voltage BVCBO 15 V IC=10 A Emitter-base breakdown voltage BVEBO 6 V IE=10 A Collector cut-off current ICBO 100 nA VCB=15V Emitter cut-off current IEBO 100 nA VEB=6V Collector-emitter saturation voltage VCE(sat) 100 250 mV IC=200mA, IB=10mA hFE 270 680 VCE=2V, IC=10mA DC current gain Transition frequency fT 260 MHz VCE=2V, IE=10mA, f=100MHz VCB=10V, IE=0mA, f=1MHz Collector output capacitance Cob 6.5 pF DTr2 Parameter Symbol Min. Typ. Max. Unit Conditions VI(off) 0.5 VCC=5V, IO=100 A Input voltage V VI(on) 3 VO=0.3V, IO=10mA Output voltage VO(on) 0.1 0.3 V IO/II=10mA/0.5mA Input current II 0.88 mA VI=5V Output current IO(off) 0.5 A VCC=50V, VI=0V DC current gain GI 30 VO=5V, IO=5mA Input resistance R1 7 10 13 k Resistance ratio R2/R1 0.8 1 1.2 Transition frequency fT 250 MHz VCE=10V, IE=5mA, f=100MHz Transition frequency of the device 2/4