X-On Electronics has gained recognition as a prominent supplier of EMG2T2R Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. EMG2T2R Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

EMG2T2R ROHM

EMG2T2R electronic component of ROHM
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Part No.EMG2T2R
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased DUAL NPN 50V 30MA
Datasheet: EMG2T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
226: USD 0.1804 ea
Line Total: USD 40.77 
Availability - 7878
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ: 226  Multiples: 1
Pack Size: 1
Availability Price Quantity
3865
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 1042
Multiples : 1
1042 : USD 0.2644

7878
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 226
Multiples : 1
226 : USD 0.1804
500 : USD 0.1395
1000 : USD 0.1315
2000 : USD 0.128
8000 : USD 0.1239

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
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Brand
Pd - Power Dissipation
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We are delighted to provide the EMG2T2R from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMG2T2R and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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EMG2 / UMG2N / FMG2A Emitter common (dual digital transistors) Datasheet llOutline Parameter DTr1 and DTr2 SOT-553 SOT-353 V 50V CC I 100mA C(MAX.) R 47k 1 EMG2 UMG2N R 47k (EMT5) (UMT5) 2 SOT-25 llFeatures 1)Two DTC144E chips in a EMT or UMT or SMT package. FMG2A 2)Mounting cost and area can be cut in half. (SMT5) llInner circuit EMG2 / UMG2N FMG2A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-553 EMG2 1616 T2R 180 8 8000 G2 (EMT5) SOT-353 UMG2N 2021 TR 180 8 3000 G2 (UMT5) SOT-25 FMG2A 2928 T148 180 8 3000 G2 (SMT5) www.rohm.com 1/7 20151001 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMG2 / UMG2N / FMG2A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage 50 V CC V Input voltage -10 to 40 V IN I Output current 30 mA O *1 I Collector current 100 mA C(MAX) *2*3 P EMG2 150 D *2*3 P Power dissipation UMG2N 150 mW D *2*4 FMG2A P 300 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 2mA 3.0 - - I(on) O O V I = 10mA, I = 0.5mA Output voltage - 100 300 mV O(on) O I I Input current V = 5V - - 180 A I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G DC current gain V = 5V, I = 5mA 68 - - - I O O R Input resistance - 32.9 47 61.1 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/7 20151001 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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