X-On Electronics has gained recognition as a prominent supplier of EMG3T2R Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. EMG3T2R Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

EMG3T2R ROHM

EMG3T2R electronic component of ROHM
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See Product Specifications
Part No.EMG3T2R
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased DUAL DIGITAL NPNNPN INPUT RESISTOR
Datasheet: EMG3T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3419 ea
Line Total: USD 0.34 
Availability - 7760
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 EMG3T2R More Buying Options & Price Grid(s)

Availability Price Quantity
7148
Ship by Wed. 01 Jan to Mon. 06 Jan
MOQ : 5
Multiples : 5
5 : USD 0.116
50 : USD 0.1026
150 : USD 0.096
500 : USD 0.091
2500 : USD 0.0708
5000 : USD 0.0689

7760
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3419
10 : USD 0.212
100 : USD 0.1012
1000 : USD 0.0788
2500 : USD 0.0735
8000 : USD 0.0628
24000 : USD 0.0586
48000 : USD 0.0575
96000 : USD 0.0543

7749
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 365
Multiples : 1
365 : USD 0.2791
500 : USD 0.2691
1000 : USD 0.2603
2500 : USD 0.2526
5000 : USD 0.2458

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Pd - Power Dissipation
Factory Pack Quantity :
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EMG3T2R from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMG3T2R and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

EMG3 / UMG3N / FMG3A Datasheet Emitter common (dual digital transistor) llOutline Parameter DTr1 and DTr2 SOT-553 SOT-353 V 50V CEO I 100mA C R 4.7k 1 EMG3 UMG3N (EMT5) (UMT5) SOT-25 llFeatures 1)Two DTC143T chips in a EMT or UMT or SMT package. FMG3A 2)Mounting cost and area can be cut in half. (SMT5) llInner circuit EMG3 / UMG3N FMG3A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-553 EMG3 1616 T2R 180 8 8000 G3 (EMT5) SOT-353 UMG3N 2021 TR 180 8 3000 G3 (UMT5) SOT-25 FMG3A 2928 T148 180 8 3000 G3 (SMT5) www.rohm.com 1/6 20151019 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMG3 / UMG3N / FMG3A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1*2 P EMG3 150 D *1*2 P Power dissipation UMG3N 150 mW/Total D *1*3 FMG3A P 300 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E I V = 50V Collector cut-off current - - 500 nA CBO CB I V = 4V Emitter cut-off current - - 500 nA EBO EB Collector-emitter saturation voltage V I = 5mA, I = 0.25mA - - 300 mV C B CE(sat) h V = 5V, I = 1mA DC current gain 100 250 600 - FE CE C R Input resistance - 3.29 4.7 6.11 k 1 V = 10V, I = -5mA, CE E *4 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor. www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20151019 - Rev.002

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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