X-On Electronics has gained recognition as a prominent supplier of EMH11T2R Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. EMH11T2R Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

EMH11T2R ROHM

EMH11T2R electronic component of ROHM
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See Product Specifications
Part No.EMH11T2R
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased DUAL NPN 50V 50MA
Datasheet: EMH11T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3419 ea
Line Total: USD 0.34 
Availability - 6774
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6774
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3419
10 : USD 0.2354
100 : USD 0.1289
1000 : USD 0.1022
8000 : USD 0.0916
24000 : USD 0.0874

5061
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 191
Multiples : 1
191 : USD 0.213
211 : USD 0.1934
1000 : USD 0.1625
2000 : USD 0.1521

12789
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 414
Multiples : 1
414 : USD 0.2466
500 : USD 0.2377
1000 : USD 0.23
2500 : USD 0.2231
5000 : USD 0.2171
10000 : USD 0.2118

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Pd - Power Dissipation
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We are delighted to provide the EMH11T2R from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMH11T2R and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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EMH11 / UMH11N / IMH11A General purpose (dual digital transistors) Datasheet llOutline Parameter DTr1 and DTr2 SOT-563 SOT-363 V 50V CC I 100mA C(MAX.) R 10k 1 EMH11 UMH11N R 10k (EMT6) (UMT6) 2 SOT-457 llFeatures 1)Two DTC114E chips in a EMT or UMT or SMT package. IMH11A 2)Mounting possible with EMT3 or UMT3 or (SMT6) SMT3 automatic mounting machines. 3)Transistor elements are independent, llInner circuit eliminating interference. 4)Mounting cost and area can be cut in half. EMH11 / UMH11N IMH11A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMH11 1616 T2R 180 8 8000 H11 (EMT6) SOT-363 UMH11N 2021 TN 180 8 3000 H11 (UMT6) SOT-457 IMH11A 2928 T110 180 8 3000 H11 (SMT6) www.rohm.com 1/7 20151001 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMH11 / UMH11N / IMH11A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage 50 V CC V Input voltage -10 to 40 V IN I Output current 50 mA O *1 I Collector current 100 mA C(MAX) *2*3 P EMH11 150 D *2*3 P Power dissipation UMH11N 150 mW D *2*4 IMH11A P 300 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 10mA 3.0 - - I(on) O O V I = 10mA, I = 0.5mA Output voltage - 100 300 mV O(on) O I I Input current V = 5V - - 880 A I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G DC current gain V = 5V, I = 5mA 30 - - - I O O R Input resistance - 7 10 13 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = 10V, I = -5mA, CE E f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/7 20151001 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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