X-On Electronics has gained recognition as a prominent supplier of EMH15T2R Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. EMH15T2R Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

EMH15T2R ROHM

EMH15T2R electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.EMH15T2R
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased TRANS DIGI BJT NPN 50V 100MA 6PIN
Datasheet: EMH15T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1042: USD 0.0884 ea
Line Total: USD 92.11 
Availability - 0
MOQ: 1042  Multiples: 1042
Pack Size: 1042

 EMH15T2R More Buying Options & Price Grid(s)

Availability Price Quantity
7643
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 1042
Multiples : 1
1042 : USD 0.0884
2500 : USD 0.0857
5000 : USD 0.0834

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EMH15T2R from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMH15T2R and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

EMH15 / IMH15A Datasheet General purpose (dual digital transistor) llOutline Parameter DTr1 and DTr2 SOT-563 SOT-457 V 50V CEO I 100mA C R 47k 1 EMH15 IMH15A (EMT6) (SMT6) llFeatures llInner circuit 1)Two DTC144T chips in a EMT or SMT EMH15 package. 2)Mounting possible with EMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. IMH15A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMH15 1616 T2R 180 8 8000 H15 (EMT6) SOT-457 IMH15A 2928 T110 180 8 3000 H15 (SMT6) www.rohm.com 1/5 20151008 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. Not Recommended for New DesignsEMH15 / IMH15A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1*2 P EMH15 150 D Power dissipation mW/Total *1*3 P IMH15A 300 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E I V = 50V Collector cut-off current - - 500 nA CBO CB I V = 4V Emitter cut-off current - - 500 nA EBO EB Collector-emitter saturation voltage V I = 10mA, I = 1mA - - 300 mV CE(sat) C B h V = 5V, I = 1mA DC current gain 100 250 600 - FE CE C R Input resistance - 32.9 47 61.1 k 1 V = 10V, I = -5mA, CE E *4 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor. www.rohm.com 2/5 2015 ROHM Co., Ltd. All rights reserved. 20151008 - Rev.002 Not Recommended for New Designs

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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