X-On Electronics has gained recognition as a prominent supplier of EMH2T2R Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. EMH2T2R Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

EMH2T2R ROHM

Hot EMH2T2R electronic component of ROHM
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See Product Specifications
Part No.EMH2T2R
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased DUAL NPN 50V 30MA
Datasheet: EMH2T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.0814 ea
Line Total: USD 0.41 
Availability - 4264
Ship by Tue. 03 Sep to Fri. 06 Sep
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
4239
Ship by Tue. 03 Sep to Fri. 06 Sep
MOQ : 5
Multiples : 5
5 : USD 0.0814
50 : USD 0.0713
150 : USD 0.0661
500 : USD 0.0622
2500 : USD 0.0593
5000 : USD 0.0576

13536
Ship by Mon. 02 Sep to Wed. 04 Sep
MOQ : 1
Multiples : 1
1 : USD 0.3795
10 : USD 0.2921
100 : USD 0.1587
1000 : USD 0.1104
2500 : USD 0.1
8000 : USD 0.0978
24000 : USD 0.0932

13945
Ship by Tue. 27 Aug to Mon. 02 Sep
MOQ : 146
Multiples : 1
146 : USD 0.2795
200 : USD 0.2584
1000 : USD 0.078
2000 : USD 0.0762
8000 : USD 0.0738

   
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RoHS - XON
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We are delighted to provide the EMH2T2R from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMH2T2R and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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EMH2 / UMH2N / IMH2A General purpose (dual digital transistors) Datasheet llOutline Parameter DTr1 and DTr2 SOT-563 SOT-363 V 50V CC I 100mA C(MAX.) R 47k 1 EMH2 UMH2N R 47k (EMT6) (UMT6) 2 SOT-457 llFeatures 1)Two DTC144Es chips in a EMT or UMT or SMT package. IMH2A 2)Mounting possible with EMT3 or UMT3 or (SMT6) SMT3 automatic mounting machines. 3)Transistor elements are independent, llInner circuit eliminating interference. 4)Mounting cost and area can be cut in half. EMH2 / UMH2N IMH2A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMH2 1616 T2R 180 8 8000 H2 (EMT6) SOT-363 UMH2N 2021 TN 180 8 3000 H2 (UMT6) SOT-457 IMH2A 2928 T110 180 8 3000 H2 (SMT6) www.rohm.com 1/7 20151001 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMH2 / UMH2N / IMH2A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage 50 V CC V Input voltage -10 to 40 V IN I Output current 30 mA O *1 I Collector current 100 mA C(MAX) *2*3 P EMH2 150 D *2*3 P Power dissipation UMH2N 150 mW D *2*4 IMH2A P 300 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 2mA 3.0 - - I(on) O O V I = 10mA, I = 0.5mA Output voltage - 100 300 mV O(on) O I I Input current V = 5V - - 180 A I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G DC current gain V = 5V, I = 5mA 68 - - - I O O R Input resistance - 32.9 47 61.1 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference land *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/7 20151001 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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