EML20T2R ROHM

1.6 1.2 EML20 Transistors General purpose transistor (isolated transistor and diode) EML20 DTC123J A and RB521S-30 are housed independently in a EMT6 package. z External dimensions (Unit : mm) z Applications DC / DC converter EMT6 Motor driver 1.6 0.5 1.0 z Features 0.5 0.5 ( ) (6) 5 (4) 1) Tr : NPN digital transistor Di : Low VF 2)Mounting possible with EMT3 automatic mounting ( ) ( ) ( ) 1pin mark 1 2 3 machines. 0.22 0.13 Each lead has same dimensions Abbreviated symbol : L20 z Structure ROHM : EMT6 NPN Silicon epitaxial planar digital transistor Schottky barrier diode The following characteristics apply to both Di1 and DTr2. zz Equivalent circuit (6) (5) (4) R1 Di1 DTr2 R2 (1) (2) (3) R1=2.2k: , R2=47k: z z Packaging specifications Type EML20 Package EMT6 Marking L20 Code T2R Basic ordering unit (pieces) 8000 1/3 Not Recommended for New DesignsEML20 Transistors z Absolute maximum ratings (Ta=25q C) Di1 Parameter Symbol Limits Unit Average revtified forward current IO 200 mA Forward current surge peak (60Hz, 1) IFSM 1 A Reverse voltage (DC) VR 30 V Junction temperature Tj 125 C DTr2 Parameter Symbol Limits Unit Supply voltage VCC 50 V 12 VIN V Input voltage 5 IO 100 mA Output current IC (MAX.) 100 mA Power dissipation Pd 120 mW Tj 150 C Junction temperature Each terminal mounted on a recommended. Di1 / DTr2 Parameter Symbol Limits Unit Power dissipation Pd 150 mW Tstg 55 to +125 C Storage temperature Each terminal mounted on a recommended. zz Electrical characteristics (Ta=25q C) Di1 Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 0.40 0.50 V IF=200mA Reverse current IR 4.0 30 AVR=10V DTr2 Parameter Symbol Min. Typ. Max. Unit Conditions Vl(off) 0.5 V VCC=5V / Io=100uA Input voltage VI(on) 1.1 V VO=0.3V / Io=5mA Vo(on) mV Output voltage 100 300 IO=5mA, II=0.25mA Input current II 3.6 mA VI=5V Output current IO(off) 500 nA VCC=50V / VI=0V DC current gain GI 80 VO=5V / Io=10mA Transition frequency fT 250 MHz VCE=10V / IE= 5mA, f=100MHz Input resistance R1 1.54 2.2 2.86 k Resistance ratio R2/R1 17 21 26 Characteristics of built-in transistor. 2/3 Not Recommended for New Designs