X-On Electronics has gained recognition as a prominent supplier of FMA2AT148 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. FMA2AT148 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

FMA2AT148 ROHM

Hot FMA2AT148 electronic component of ROHM
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Part No.FMA2AT148
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased DUAL PNP 50V 30MA
Datasheet: FMA2AT148 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
263: USD 0.1549 ea
Line Total: USD 40.74 
Availability - 5790
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ: 263  Multiples: 1
Pack Size: 1
Availability Price Quantity
871
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5373
10 : USD 0.3422
100 : USD 0.1717
1000 : USD 0.1504
3000 : USD 0.1137
9000 : USD 0.1081

5790
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 263
Multiples : 1
263 : USD 0.1549
500 : USD 0.0833
1000 : USD 0.0807
2000 : USD 0.0779
3000 : USD 0.0774

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
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DC Collector/Base Gain hFE Min
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Dc Collectorbase Gain Hfe Min
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Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FMA2AT148 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FMA2AT148 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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EMA2 / UMA2N / FMA2A Emitter common (dual digital transistors) Datasheet llOutline Parameter DTr1 and DTr2 SOT-553 SOT-353 V -50V CC I -100mA C(MAX.) R 47k 1 EMA2 UMA2N R 47k (EMT5) (UMT5) 2 SOT-25 llFeatures 1)Two DTA144E transistors in a EMT or UMT or SMT package. FMA2A 2)Mounting cost and area can be cut in half. (SMT5) llInner circuit EMA2 / UMA2N FMA2A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-553 EMA2 1616 T2R 180 8 8000 A2 (EMT5) SOT-353 UMA2N 2021 TR 180 8 3000 A2 (UMT5) SOT-25 FMA2A 2928 T148 180 8 3000 A2 (SMT5) www.rohm.com 1/7 20151001 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMA2 / UMA2N / FMA2A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage -50 V CC V Input voltage -40 to 10 V IN I Output current -30 mA O *1 I Collector current -100 mA C(MAX) *2*3 P EMA2 150 D *2*3 P Power dissipation UMA2N 150 mW D *2*4 FMA2A P 300 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -2mA -3.0 - - I(on) O O V I = -10mA, I = -0.5mA Output voltage - -100 -300 mV O(on) O I I Input current V = -5V - - -180 A I I I V = -50V, V = 0V Output current - - -500 nA O(off) CC I G DC current gain V = -5V, I = -5mA 68 - - - I O O R Input resistance - 32.9 47 61.1 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/7 20151001 - Rev.002

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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