X-On Electronics has gained recognition as a prominent supplier of FMA9AT148 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. FMA9AT148 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

FMA9AT148 ROHM

FMA9AT148 electronic component of ROHM
FMA9AT148 ROHM
FMA9AT148 Bipolar Transistors - Pre-Biased
FMA9AT148  Semiconductors

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See Product Specifications
Part No. FMA9AT148
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased DUAL PNP 50V 50MA SMT5
Datasheet: FMA9AT148 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6762 ea
Line Total: USD 0.68 
Availability - 2818
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2818
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.6762
10 : USD 0.4175
100 : USD 0.2016
1000 : USD 0.1672
3000 : USD 0.1276
9000 : USD 0.121
24000 : USD 0.1188
99000 : USD 0.1155

2910
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 625
Multiples : 1
625 : USD 0.1572
1000 : USD 0.152
2500 : USD 0.1476

255
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 262
Multiples : 1
262 : USD 0.3892

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Brand
Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FMA9AT148 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FMA9AT148 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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UMA9N / FMA9A Datasheet Emitter common(dual digital transistors) llOutline Parameter DTr1 and DTr2 SOT-353 SOT-25 V -50V CC I -100mA C(MAX.) R 10k 1 UMA9N FMA9A R (UMT5) (SMT5) 10k 2 llFeatures llInner circuit 1)Two DTA114E chips in UMT and SMT UMA9N packages. 2)Mounting cost and area can be cut in half. FMA9A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-353 UMA9N 2021 TR 180 8 3000 A9 (UMT5) SOT-25 FMA9A 2928 T148 180 8 3000 A9 (SMT5) www.rohm.com 1/6 20151008 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.UMA9N / FMA9A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage -50 V CC V Input voltage -40 to 10 V IN I Output current -50 mA O *1 I Collector current -100 mA C(MAX) *2*3 P UMA9N 150 D Power dissipation mW/Total *2*4 P FMA9A 300 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.5 I(off) CC O Input voltage V V V = -0.3V, I = -10mA -3 - - I(on) O O V Output voltage I = -10mA, I = -0.5mA - -100 -300 mV O(on) O I I V = -5V Input current - - -880 A I I I V = -50V, V = 0V Output current - - -500 nA O(off) CC I G DC current gain V = -5V, I = -5mA 30 - - - I O O R Input resistance - 7 10 13 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2/6 20151008 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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