X-On Electronics has gained recognition as a prominent supplier of FMG8AT148 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. FMG8AT148 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

FMG8AT148 ROHM

FMG8AT148 electronic component of ROHM
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See Product Specifications
Part No. FMG8AT148
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased DUAL NPN 50V 100MA SMT5
Datasheet: FMG8AT148 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0565 ea
Line Total: USD 169.5 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 06 Sep to Thu. 12 Sep
MOQ : 3000
Multiples : 3000
3000 : USD 0.0749
9000 : USD 0.0694
15000 : USD 0.0694
30000 : USD 0.0694
60000 : USD 0.0694

0
Ship by Fri. 06 Sep to Thu. 12 Sep
MOQ : 3000
Multiples : 3000
3000 : USD 0.0565

0
Ship by Thu. 12 Sep to Mon. 16 Sep
MOQ : 3000
Multiples : 3000
3000 : USD 0.0978
9000 : USD 0.0909
24000 : USD 0.0851
45000 : USD 0.0816
99000 : USD 0.0794

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FMG8AT148 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FMG8AT148 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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EMG8 / UMG8N / FMG8A Transistors Emitter common (dual digital transistors) EMG8 / UMG8N / FMG8A z Features z External dimensions (Unit : mm) 1) Two DTC143Z chips in a EMT or UMT or SMT EMG8 package. 2) Mounting cost and area can be cut in half. (4) (3) ( ) 2 (5) (1) 1.2 1.6 z Structure Each lead has same dimensions Epitaxial planar type ROHM : EMT5 NPN silicon transistor Abbreviated symbol : G8 (Built-in resistor type) UMG8N The following characteristics apply to both the DTr1 and DTr2. 1.25 2.1 0.1Min. z Equivalent circuit Each lead has same dimensions EMG8 / UMG8N FMG8A ROHM : UMT5 EIAJ : SC-88A (3) (2) (1) (3) (4) (5) R1=4.7k R1=4.7k Abbreviated symbol : G8 R1 R1 R1 R1 R2=47k R2=47k R2 R2 R2 R2 DTr2 DTr1 DTr2 DTr1 FMG8A (2) (1) (4) (5) 1.6 2.8 z Absolute maximum ratings (Ta = 25C) 0.3to0.6 Each lead has same dimensions Parameter Symbol Limits Unit ROHM : SMT5 Supply voltage VCC 50 V EIAJ : SC-74A 30 Abbreviated symbol : G8 Input voltage VIN V 5 IO 100 Output current mA IC (Max.) 100 1 EMG8, UMG8N 150 (TOTAL) Power Pd mW dissipation FMG8A 300 (TOTAL) 2 Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. Rev.A 1/2 0.3 0.15 0.2 0.15 0.13 0.22 ( ) (1) 2 ( ) ( ) 4 5 0to0.1 0to0.1 ( ) ( ) (5) (4) ( ) 1 3 3 ( ) 2 0.5 0.5 0.95 0.95 0.7 0.65 0.65 1.0 0.8 1.9 0.5 1.6 2.9 1.1 0.9 1.3 2.0EMG8 / UMG8N / FMG8A Transistors z Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions 0.5 VCC=5V, IO=100A VI (off) Input voltage V 1.3 VO=0.3V, IO=5mA VI (on) Output voltage 0.1 0.3 V IO=5mA, II=0.25mA VO (on) Input current II 1.8 mA VI=5V Output current 0.5 A VCC=50V, VI=0V IO (off) DC current gain GI 80 VO=5V, IO=10mA Transition frequency fT 250 MHz VCE=10V, IE=5mA, f=100MHz Input resistance R1 3.29 4.7 6.11 k Resistance ratio R2/R1 8 10 12 Transition frequency of the device z Packaging specifications Package Taping Code T2R TR T148 Basic ordering 8000 3000 3000 Type unit (pieces) EMG8 UMG8N FMG8A z Electrical characteristic curves 100 10m 1k VCC=5V VO=5V VO=0.3V 5m 500 50 2m Ta=100C 20 1m 200 25C 40C 500 10 100 200 5 Ta=100C 50 Ta=40C 25C 100 25C 40C 2 20 50 100C 1 10 20 10 500m 5 5 200m 2 2 1 100m 1 100 200 500 1m 2m 5m 10m 20m 50m100m 0 0.5 1.0 1.5 2.0 2.5 3.0 100 200 500 1m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) Fig.2 Output current vs. input voltage Fig.1 Input voltage vs. output current Fig.3 DC current gain vs. output (OFF characteristics) current (ON characteristics) 1 lO/lI=20 500m Ta=100C 200m 25C 100m 40C 50m 20m 10m 5m 2m 1m 100 200 500 1m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current Rev.A 2/2 OUTPTUT VOLTAGE : VO (on) (V) INPUT VOLTAGE : VI (on) (V) OUTPUT CURRENT : Io (A) DC CURRENT GAIN : GI

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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