FMG9AT148 ROHM

EMG9 / UMG9N / FMG9A Emitter common (dual digital transistors) Datasheet llOutline Parameter DTr1 and DTr2 SOT-553 SOT-353 V 50V CC I 100mA C(MAX.) R 10k 1 EMG9 UMG9N R 10k (EMT5) (UMT5) 2 SOT-25 llFeatures 1)Two DTC114E chips in a EMT or UMT or SMT package. FMG9A 2)Mounting cost and area can be cut in half. (SMT5) llInner circuit EMG9 / UMG9N FMG9A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-553 EMG9 1616 T2R 180 8 8000 G9 (EMT5) SOT-353 UMG9N 2021 TR 180 8 3000 G9 (UMT5) SOT-25 FMG9A 2928 T148 180 8 3000 G9 (SMT5) www.rohm.com 1/7 20151001 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMG9 / UMG9N / FMG9A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage 50 V CC V Input voltage -10 to 40 V IN I Output current 50 mA O *1 I Collector current 100 mA C(MAX) *2*3 P EMG9 150 D *2*3 P Power dissipation UMG9N 150 mW D *2*4 FMG9A P 300 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 10mA 3.0 - - I(on) O O V I = 10mA, I = 0.5mA Output voltage - 100 300 mV O(on) O I I Input current V = 5V - - 880 A I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G DC current gain V = 5V, I = 5mA 30 - - - I O O R Input resistance - 7 10 13 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 Should be less than 120mW per element *4 Should be less than 200mW per element. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/7 20151001 - Rev.002