IMD6AT108 ROHM

EMD6 / UMD6N / IMD6A Datasheet General purpose (dual digital transistor) <For DTr1(NPN)> llOutline Parameter Value SOT-563 SOT-363 V 50V CEO I 100mA C R 4.7k 1 EMD6 UMD6N (EMT6) (UMT6) <For DTr2(PNP)> SOT-457 Parameter Value V -50V CEO I -100mA C R 4.7k 1 IMD6A (SMT6) llFeatures llInner circuit 1)Both the DTA143T chip and DTC143T EMD6 / UMD6N chip in an EMT or UMT or SMTpackage. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. IMD6A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMD6 1616 T2R 180 8 8000 D6 (EMT6) SOT-363 UMD6N 2021 TR 180 8 3000 D6 (UMT6) SOT-457 IMD6A 2928 T108 180 8 3000 D6 (SMT6) www.rohm.com 1/7 20151029 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMD6 / UMD6N / IMD6A Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol DTr1(NPN) DTr2(PNP) Unit V Collector-base voltage 50 -50 V CBO V Collector-emitter voltage 50 -50 V CEO V Emitter-base voltage 5 -5 V EBO I Collector current 100 -100 mA C *1*2 P EMD6/ UMD6N 150 D Power dissipation mW/Total *1*3 P IMD6A 300 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <For DTr1(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV I = 50A Collector-base breakdown voltage 50 - - V CBO C Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV I = 50A Emitter-base breakdown voltage 5 - - V EBO E I Collector cut-off current V = 50V - - 500 nA CBO CB I Emitter cut-off current V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 5mA, I = 0.25mA - - 300 mV CE(sat) C B h V = 5V, I = 1mA DC current gain 100 250 600 - FE CE C R Input resistance - 3.29 4.7 6.11 k 1 V = 10V, I = -5mA, CE E *4 f Transition frequency - 250 - MHz T f = 100MHz llElectrical characteristics (T = 25C) <For DTr2(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = -50A -50 - - V CBO C Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV I = -50A Emitter-base breakdown voltage -5 - - V EBO E I Collector cut-off current V = -50V - - -500 nA CBO CB I Emitter cut-off current V = -4V - - -500 nA EBO EB Collector-emitter saturation voltage V I = -5mA, I = -0.25mA - - -300 mV CE(sat) C B h V = -5V, I = -1mA DC current gain 100 250 600 - FE CE C R Input resistance - 3.29 4.7 6.11 k 1 V = -10V, I = 5mA, CE E *4 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor. www.rohm.com 2/7 20151029 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.