X-On Electronics has gained recognition as a prominent supplier of IMD6AT108 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. IMD6AT108 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

IMD6AT108 ROHM

IMD6AT108 electronic component of ROHM
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See Product Specifications
Part No.IMD6AT108
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased PNP/NPN 50V 100MA SOT-457
Datasheet: IMD6AT108 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1169 ea
Line Total: USD 0.58 
Availability - 2575
Ship by Thu. 02 Jan to Tue. 07 Jan
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2575
Ship by Thu. 02 Jan to Tue. 07 Jan
MOQ : 5
Multiples : 5
5 : USD 0.1169
50 : USD 0.1035
150 : USD 0.0971
500 : USD 0.092
3000 : USD 0.0732
6000 : USD 0.0711

2908
Ship by Tue. 24 Dec to Thu. 26 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3419
10 : USD 0.2737
100 : USD 0.1864
1000 : USD 0.1108
3000 : USD 0.0916
9000 : USD 0.0884
24000 : USD 0.0852
99000 : USD 0.0831

29
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 30
Multiples : 1
30 : USD 3.1624

2900
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 625
Multiples : 1
625 : USD 0.375

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Number Of Channels
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IMD6AT108 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IMD6AT108 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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EMD6 / UMD6N / IMD6A Datasheet General purpose (dual digital transistor) <For DTr1(NPN)> llOutline Parameter Value SOT-563 SOT-363 V 50V CEO I 100mA C R 4.7k 1 EMD6 UMD6N (EMT6) (UMT6) <For DTr2(PNP)> SOT-457 Parameter Value V -50V CEO I -100mA C R 4.7k 1 IMD6A (SMT6) llFeatures llInner circuit 1)Both the DTA143T chip and DTC143T EMD6 / UMD6N chip in an EMT or UMT or SMTpackage. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. IMD6A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMD6 1616 T2R 180 8 8000 D6 (EMT6) SOT-363 UMD6N 2021 TR 180 8 3000 D6 (UMT6) SOT-457 IMD6A 2928 T108 180 8 3000 D6 (SMT6) www.rohm.com 1/7 20151029 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMD6 / UMD6N / IMD6A Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol DTr1(NPN) DTr2(PNP) Unit V Collector-base voltage 50 -50 V CBO V Collector-emitter voltage 50 -50 V CEO V Emitter-base voltage 5 -5 V EBO I Collector current 100 -100 mA C *1*2 P EMD6/ UMD6N 150 D Power dissipation mW/Total *1*3 P IMD6A 300 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <For DTr1(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV I = 50A Collector-base breakdown voltage 50 - - V CBO C Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV I = 50A Emitter-base breakdown voltage 5 - - V EBO E I Collector cut-off current V = 50V - - 500 nA CBO CB I Emitter cut-off current V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 5mA, I = 0.25mA - - 300 mV CE(sat) C B h V = 5V, I = 1mA DC current gain 100 250 600 - FE CE C R Input resistance - 3.29 4.7 6.11 k 1 V = 10V, I = -5mA, CE E *4 f Transition frequency - 250 - MHz T f = 100MHz llElectrical characteristics (T = 25C) <For DTr2(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = -50A -50 - - V CBO C Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV I = -50A Emitter-base breakdown voltage -5 - - V EBO E I Collector cut-off current V = -50V - - -500 nA CBO CB I Emitter cut-off current V = -4V - - -500 nA EBO EB Collector-emitter saturation voltage V I = -5mA, I = -0.25mA - - -300 mV CE(sat) C B h V = -5V, I = -1mA DC current gain 100 250 600 - FE CE C R Input resistance - 3.29 4.7 6.11 k 1 V = -10V, I = 5mA, CE E *4 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor. www.rohm.com 2/7 20151029 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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