EMH10 / UMH10N / IMH10A Transistors General purpose (dual digital transistors) EMH10 / UMH10N / IMH10A zz zz External dimensions (Units : mm) z z Features z z 1) Two DTC123J chips in a EMT or UMT or SMT EMH10 package. 2) Mounting possible with EMT3 or UMT3 or SMT3 ( ) (3) 4 (5) (2) automatic mounting machines. (6) (1) 1.2 1.6 3) Transistor elements are independent, eliminating interference. Each lead has same dimensions 4) Mounting cost and area can be cut in half. Abbreviated symbol : H10 ROHM : EMT6 zz zz Structure Epitaxial planar type UMH10N NPN silicon transistor (Built-in resistor type) 1.25 2.1 The following characteristics apply to both DTr1 and DTr2. 0.1Min. zz zz Equivalent circuit Each lead has same dimensions ROHM : UMT6 Abbreviated symbol : H10 EMH10 / UMH10N IMH10A EIAJ : SC-88 (3) (2) (1) (4) (5) (6) R1 R2 R1 R2 DTr1 DTr1 IMH10A DTr2 DTr2 R2 R2 R1 R1 (4) (5) (6) (3) (2) (1) R1=2.2k R1=2.2k R2=47k R2=47k 1.6 2.8 0.3to0.6 zz zz Packaging specifications Each lead has same dimensions Package Taping ROHM : SMT6 Abbreviated symbol : H10 Code T2R TN T110 EIAJ : SC-74 8000 3000 3000 Type Basic ordering unit (pieces) EMH10 UMH10N IMH10A 0.2 0.15 0.15 0.3 0.22 0.13 (5) ( ) ( ) (4) (5) 6 (6) 4 0to0.1 0to0.1 ( ) ( ) ( ) ( ) (1) 1 3 3 2 ( ) 2 0.5 0.5 0.65 0.65 1.0 0.8 0.95 0.95 0.7 0.5 1.6 1.9 1.1 0.9 1.3 2.9 2.0EMH10 / UMH10N / IMH10A Transistors zz zz Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Supply voltage VCC 50 V 12 Input voltage VIN V 5 IO 100 mA Output current IC (Max.) 100 mA EMH10,UMH10N 150 (TOTAL) 1 Power Pd mW dissipation IMH10A 300 (TOTAL) 2 Storage temperature Tstg 55~+150 C 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. z z Electrical characteristics (Ta=25C) z z Parameter Symbol Min. Typ. Max. Unit Conditions VI (off) 0.5 VCC=5V, IO=100 A Input voltage V VI (on) 1.1 VO=0.3V, IO=5mA Output voltage VO (on) 0.1 0.3 V IO/II=5mA/0.25mA Input current II 3.6 mA VI=5V Output current IO (off) 0.5 A VCC=50V, VI=0V DC current gain GI 80 VO=5V, IO=10mA 250 MHz Transition frequency fT VCE=10mA, IE=5mA, f=100MHz Input resistance R1 1.54 2.2 2.86 k Resistance ratio R2/R1 17 21 26 Transition frequency of the device z z Electrical characteristic curves z z 100 10m 1k VO=0.3V VCC=5V VO=5V 5m 50 500 2m Ta=100C 20 200 25C 1m 40C 500 10 100 Ta=100C 5 200 50 25C 100 Ta=40C 40C 2 25C 20 50 100C 1 10 20 500m 10 5 5 200m 2 2 100m 1 1 100 200 500 1m 2m 5m 10m 20m 50m100m 0 0.5 1.0 1.5 2.0 2.5 3.0 100 200 500 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output Fig.1 Input voltage vs. output current Fig.2 Output current vs. input voltage current (ON characteristics) (OFF characteristics) INPUT VOLTAGE : VI (on) (V) OUTPUT CURRENT : Io (A) DC CURRENT GAIN : GI