IMH21 Datasheet NPN 600mA 20V Digital Transistors (Bias Resistor Built-in Transistors) For Muting. Outline SMT6 Parameter Tr1 and Tr2 (4) (5) V 20V CEO (6) (3) V 12V EBO (2) (1) I 600mA C IMH21 R 10k 1 SOT-457 (SC-74) Features 1) Built-In Biasing Resistors 2) Two DTC614T chips in one package. 3) Low saturation voltage, typically V =40mV at I / I =50mA / 2.5mA, makes these CE(sat) C B transistors ideal for muting circuits. 4) These transistors can be used at high current levels, I =600mA. Inner circuit C Collector Base Emitter 5) Built-in bias resistors enable the configuration of (4) (5) (6) an inverter circuit without connecting external input resistors (see equivalent circuit). R 1 6) The bias resistors consist of thin-film resistors R 1 with complete isolation to allow negative biasing of the input. They also have the advantage of (3) (2) (1) completely eliminating parasitic effects. Emitter Base Collector 7) Lead Free/RoHS Compliant. R =10k 1 Application Muting circuit Packaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) IMH21 SMT6 2928 T110 180 8 3,000 H21 www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.C 1/5Data Sheet IMH21 Absolute maximum ratings (Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Values Unit V 20 V Collector-base voltage CBO V 20 V Collector-emitter voltage CEO V Emitter-base voltage 12 V EBO I 600 mA C Collector current *1 I 1A CP *2 *3 Power dissipation P mW 300(Total) D T Junction temperature 150 C j T Range of storage temperature 55 to 150 C stg Electrical characteristics (Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Conditions Min. Typ. Max. Unit BV I = 50 A Collector-base breakdown voltage 20 - -V CBO C Collector-emitter breakdown voltage BV I = 1mA 20 - - V CEO C Emitter-base breakdown voltage BV I = 50 A 12 - - V EBO E I V = 20V Collector cut-off current - - 0.5 A CBO CB I V = 12V Emitter cut-off current - - 0.5 A EBO EB Collector-emitter saturation voltage V I / I = 50mA / 2.5mA - 40 150 mV CE(sat) C B DC current gain h V = 5V, I = 50mA 820 - 2700 - FE CE C Input resistance R - 710 13 k 1 V = 10V, I = 50mA *4 CE E Transition frequency f - 150 - MHz T f = 100MHz V = 5V I R Output ON Resistance - 0.9 - on R = 1k , f = 1kHz L *1 P =10ms, Single pulse W *2 Each terminal mounted on a reference footprint *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.C 2/5