US6H23 / IMH23 Datasheet NPN 600mA 20V Digital Transistors (Bias Resistor Built-in Transistors) For Muting. Outline TUMT6 SMT6 Parameter Tr1 and Tr2 (4) (4) (5) (5) V (6) 20V (6) CEO (3) (3) V 12V (2) EBO (2) (1) (1) I 600mA C IMH23 US6H23 R 4.7k SOT-457 (SC-74) 1 Features 1) Built-In Biasing Resistors 2) Two DTC643T chips in one package. 3) Low saturation voltage, typically V =40mV at I / I =50mA / 2.5mA, makes these CE(sat) C B transistors ideal for muting circuits. 4) These transistors can be used at high current levels, I =600mA. Inner circuit C 5) Built-in bias resistors enable the configuration of IMH23 US6H23 an inverter circuit without connecting external Collector Base Emitter Collector Base Emitter (6) (5) (4) (4) (5) (6) input resistors (see equivalent circuit). 6) The bias resistors consist of thin-film resistors R 1 R 1 with complete isolation to allow negative biasing R of the input. They also have the advantage of 1 R 1 completely eliminating parasitic effects. (1) (3) (2) (3) (2) (1) 7) Lead Free/RoHS Compliant. Emitter Emitter Base Collector Base Collector Application Muting circuit Packaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) US6H23 TUMT6 2021 TN 180 8 3,000 H23 IMH23 SMT6 2928 T110 180 8 3,000 H23 www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.C 1/6 Not Recommended for New DesignsData Sheet US6H23 / IMH23 Absolute maximum ratings (Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Values Unit V 20 V Collector-base voltage CBO V 20 V Collector-emitter voltage CEO V Emitter-base voltage 12 V EBO I 600 mA C Collector current *1 1 A I CP *2 *3 US6H23 P W 1(TOTAL) D Power dissipation *4 *5 IMH23 P mW 300(TOTAL) D T Junction temperature 150 C j T C Range of storage temperature 55 to 150 stg Electrical characteristics (Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Conditions Min. Typ. Max. Unit Collector-base breakdown voltage BV I = 50 A 20 - -V CBO C Collector-emitter breakdown voltage BV I = 1mA 20 - - V CEO C BV Emitter-base breakdown voltage I = 50 A 12 - - V EBO E I V = 20V Collector cut-off current - - 0.5 A CBO CB I V = 12V Emitter cut-off current - - 0.5 A EBO EB Collector-emitter saturation voltage V I / I = 50mA / 2.5mA - 40 150 mV CE(sat) C B DC current gain h V = 5V , I = 50mA 820 - 2700 - FE CE C R Input resistance - 3.29 4.7 6.11 k 1 V = 10V, I = 50mA *6 CE E Transition frequency f - 150 - MHz T f = 100MHz V = 5V I R Output ON Resistance - 0.55 - on R = 1k , f = 1kHz L *1 P =10ms, Single pulse W *2 Mounted on a ceramic board *3 700mW per element mounted on ceramic board. *4 Each terminal mounted on a reference footprint *5 200mW per element must not be exceeded. *6 Characteristics of built-in transistor www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.C 2/6 Not Recommended for New Designs