X-On Electronics has gained recognition as a prominent supplier of IMH2AT110 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. IMH2AT110 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

IMH2AT110 ROHM

IMH2AT110 electronic component of ROHM
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Part No.IMH2AT110
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased DUAL NPN 50V 30MA SOT-457
Datasheet: IMH2AT110 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3905 ea
Line Total: USD 0.39 
Availability - 17460
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 IMH2AT110 More Buying Options & Price Grid(s)

Availability Price Quantity
17460
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3905
10 : USD 0.2409
100 : USD 0.1155
1000 : USD 0.0935
3000 : USD 0.0792
9000 : USD 0.0759
24000 : USD 0.0693
45000 : USD 0.066
99000 : USD 0.0638

2910
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 650
Multiples : 1
650 : USD 0.1512
1000 : USD 0.1462
2500 : USD 0.1419

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IMH2AT110 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IMH2AT110 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

EMH2 / UMH2N / IMH2A General purpose (dual digital transistors) Datasheet llOutline Parameter DTr1 and DTr2 SOT-563 SOT-363 V 50V CC I 100mA C(MAX.) R 47k 1 EMH2 UMH2N R 47k (EMT6) (UMT6) 2 SOT-457 llFeatures 1)Two DTC144Es chips in a EMT or UMT or SMT package. IMH2A 2)Mounting possible with EMT3 or UMT3 or (SMT6) SMT3 automatic mounting machines. 3)Transistor elements are independent, llInner circuit eliminating interference. 4)Mounting cost and area can be cut in half. EMH2 / UMH2N IMH2A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMH2 1616 T2R 180 8 8000 H2 (EMT6) SOT-363 UMH2N 2021 TN 180 8 3000 H2 (UMT6) SOT-457 IMH2A 2928 T110 180 8 3000 H2 (SMT6) www.rohm.com 1/7 20151001 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMH2 / UMH2N / IMH2A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Supply voltage 50 V CC V Input voltage -10 to 40 V IN I Output current 30 mA O *1 I Collector current 100 mA C(MAX) *2*3 P EMH2 150 D *2*3 P Power dissipation UMH2N 150 mW D *2*4 IMH2A P 300 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.5 I(off) CC O Input voltage V V V = 0.3V, I = 2mA 3.0 - - I(on) O O V I = 10mA, I = 0.5mA Output voltage - 100 300 mV O(on) O I I Input current V = 5V - - 180 A I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G DC current gain V = 5V, I = 5mA 68 - - - I O O R Input resistance - 32.9 47 61.1 k 1 R /R Resistance ratio - 0.8 1.0 1.2 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/7 20151001 - Rev.002

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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