X-On Electronics has gained recognition as a prominent supplier of IMH3AT110 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. IMH3AT110 Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

IMH3AT110 ROHM

IMH3AT110 electronic component of ROHM
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See Product Specifications
Part No.IMH3AT110
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased DUAL NPN 50V 100MA SOT-457
Datasheet: IMH3AT110 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3962 ea
Line Total: USD 0.4 
Availability - 2890
Ship by Tue. 24 Dec to Thu. 26 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 IMH3AT110 More Buying Options & Price Grid(s)

Availability Price Quantity
2890
Ship by Tue. 24 Dec to Thu. 26 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3962
10 : USD 0.2407
100 : USD 0.115
1000 : USD 0.1033
3000 : USD 0.0809
9000 : USD 0.0724
24000 : USD 0.0692
45000 : USD 0.0671
99000 : USD 0.0661

2910
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 421
Multiples : 1
421 : USD 0.2347
500 : USD 0.2263
1000 : USD 0.2189
2500 : USD 0.2125

2813
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 141
Multiples : 1
141 : USD 0.2801
200 : USD 0.2565
500 : USD 0.2187
1000 : USD 0.1652
2000 : USD 0.1543

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Power Dissipation
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IMH3AT110 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IMH3AT110 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

EMH3 / UMH3N / IMH3A Datasheet General purpose (dual digital transistor) llOutline Parameter DTr1 and DTr2 SOT-563 SOT-363 V 50V CEO I 100mA C R 4.7k 1 EMH3 UMH3N (EMT6) (UMT6) SOT-457 llFeatures 1)Two DTC143T chips in a EMT or UMT or SMT package. IMH3A 2)Mounting possible with EMT3 or UMT3 or (SMT6) SMT3 automatic mounting machines. 3)Transistor elements are independent, llInner circuit eliminating interference. 4)Mounting cost and area can be cut in half. EMH3 / UMH3N IMH3A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMH3 1616 T2R 180 8 8000 H3 (EMT6) SOT-363 UMH3N 2021 TN 180 8 3000 H3 (UMT6) SOT-457 IMH3A 2928 T110 180 8 3000 H3 (SMT6) www.rohm.com 1/6 20151015 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMH3 / UMH3N / IMH3A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I Collector current 100 mA C *1*2 P EMH3 150 D *1*2 P Power dissipation UMH3N 150 mW/Total D *1*3 IMH3A P 300 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E I V = 50V Collector cut-off current - - 500 nA CBO CB I V = 4V Emitter cut-off current - - 500 nA EBO EB Collector-emitter saturation voltage V I = 5mA, I = 0.25mA - - 300 mV C B CE(sat) h V = 5V, I = 1mA DC current gain 100 250 600 - FE CE C R Input resistance - 3.29 4.7 6.11 k 1 V = 10V, I = -5mA, CE E *4 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20151015 - Rev.002

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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