RB075B40STL ROHM

Schottky Barrier Diode RB075BM40S Data Sheet lApplication lDimensions (Unit : mm) lLand size figure (Unit : mm) General Rectification 6.0 lFeatures 1.6 1.6 1) Power mold type (TO-252) 1 2 2) High reliability 2.3 2.3 TO-252 Low V 3) F (2) Cathode lStructure 1 ROHM : TO-252 : Manufacture Date JEITA : SC-63 2 : Serial number lConstruction (1) (3) Open Anode Silicon epitaxial planar type lTaping specifications (Unit : mm) lAbsolute maximum ratings (T = 25C) c Parameter Symbol Limits Unit Conditions Repetitive Peak Reverse Voltage V 40 V Duty0.5 RM V 40 V Direct Reverse Voltage Reverse Voltage R 60Hz half sin Wave resistive load, I 5 A Average forward rectified current o T =125C max. c 60Hz half sin wave, Non-repetitive Forward Current Surge Peak I 50 A FSM Non-repetitive at T =25C a Operating Junction Temperature T 150 C - j T C - Storage Temperature -40 to +150 stg lElectrical characteristics (T = 25C) j Parameter Symbol Min. Typ. Max. Unit Conditions V I =5.0A Forward voltage - - 0.75 V F F V =40V I - - 5 Reverse current mA R R R Thermal Resistance - - 6.0 C / W Junction to Case th(j-c) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.04 - Rev.B 1/5 6.0 3.0 2.0 Data Sheet RB075BM40S lElectrical Characteristic Curves 10 1000 Tj = 150 C Tj = 75 C 100 Tj = 125 C 10 Tj = 125 C 1 1 Tj = 75 C Tj = 25 C Tj = 150 C 0.1 0.1 0.01 Tj = 25 C Tj = -25 C 0.001 Tj = -25 C 0.0001 0.01 0 100 200 300 400 500 600 700 800 0 10 20 30 40 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 720 1000 Tj=25 C f = 1MHz 710 I =5A F n=30pcs 700 690 680 100 AVE : 669mV 670 660 650 640 10 0 10 20 30 REVERSE VOLTAGE : V (V) R V DISPERSION MAP F V -C CHARACTERISTICS R t www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.04 - Rev.B 2/5 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t FORWARD VOLTAGE : V (mV) REVERSE CURRENT : I ( mA) F R