RB160M-40TR ROHM

Schottky barrier diode Data Sheet RB160M-40 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification 0.10.1 0.05 1.60.1 1.2 Features 1)Small power mold type. PMDU 2)Low IR 3)High reliability PMDU Construction Silicon epitaxial Structure 0.90.1 0.80.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Taping specifications (Unit : mm) 0.250.05 1.550.05 2.00.05 4.00.1 1.810.1 4.00.1 1.00.1 1.5MAX Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive) V 40 V RM Reverse voltage (DC) V 40 V R Average rectified forward current 1 Io A Forward current surge peak 60Hz1cyc I 30 A FSM Junction temperature Tj 150 C Storage temperature 40 to 150 Tstg C (*1)Mounted on epoxy board. 180Half sine wave Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - 0.46 0.51 V I =1.0A F F Reverse current I - 4.0 30 A V =40V R R www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.09 - Rev.F 1/3 Not Recommended for New Designs 2.60.1 3.50.2 3.50.12 3.50.05 1.750.1 0.85 8.00.2 3.710.08 3.710.1 3.05RB160M-40 Data Sheet 1000 1000 10000 Ta=125 Ta=75 f=1MHz 1000 Ta=125 Ta=75 100 100 100 Ta=150 10 Ta=25 Ta=25 1 Ta=-25 10 10 0.1 Ta=-25 0.01 1 1 0.001 0 100 200 300 400 500 600 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 REVERSE VOLTAGE:VR(V) FORWARD VOLTAGEVF(mV) REVERSE VOLTAGEVR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 480 30 300 Ta=25 Ta=25 Ta=25 290 VF=1A VR=40V f=1MHz 25 470 n=30pcs 280 n=30pcs VR=0V 270 n=10pcs 20 AVE:279.7pF 460 260 250 15 450 240 10 AVE:454.3mV AVE:4.08uA 230 440 220 5 210 430 200 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 200 30 100 Ta=25 1cyc Ifsm 25 IF=0.5A 80 IR=1A 150 Irr=0.25*IR 8.3ms 20 n=10pcs 60 100 15 40 10 Ifsm 50 AVE:83.0A 20 AVE:10.4ns 5 8.3ms 8.3ms 1cyc 0 0 0 1 10 100 NUMBER OF CYCLES trr DISPERSION MAP IFSM DISRESION MAP IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 1000 1 200 IM=10mA IF=0.5A 0.9 Rth(j-a) Ifsm 0.8 D=1/2 1ms time t 100 150 0.7 300us 0.6 DC Rth(j-c) Sin(180) 0.5 100 10 0.4 0.3 50 1 0.2 0.1 0 0 0.1 0 0.5 1 1.5 2 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 AVERAGE RECTIFIED TIME:t(ms) TIME:t(s) FORWARD CURRENTIo(A) IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS Io-Pf CHARACTERISTICS www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/3 2015.09 - Rev.F Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD VOLTAGE:VF(mV) FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) TRANSIENT REVERSE RECOVERY TIME:trr(ns) REVERSE CURRENT:IR(uA) THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE CAPACITANCE BETWEEN CAPACITANCE BETWEEN FORWARD POWER TERMINALS:Ct(pF) TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A) DISSIPATION:Pf(W)