RB160M-50TR ROHM

Schottky barrier diode Data Sheet RB160M-60 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification 0.10.1 0.05 1.60.1 1.2 Features 1)Small power mold type. PMDU 2)Low I R 3)High reliability PMDU Construction Silicon epitaxial planar Structure 0.90.1 0.80.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Taping specifications (Unit : mm) 0.250.05 1.550.05 2.00.05 4.00.1 1.810.1 4.00.1 1.00.1 1.5MAX Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive) V 60 V RM Reverse voltage (DC) V 60 V R Average rectified forward current 1 Io A Forward current surge peak 60Hz1cyc 30 I A FSM Junction temperature Tj 150 C Storage temperature Tstg 40 to 150 C (*1)Mounting on epoxi board. 180Half sine wave Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - 0.49 0.55 V I =1.0A F F Reverse current I - 7.0 50 A V =60V R R Capacitance between terminals V =10V , f=1MHz Ct - 40 - pF R www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.09 - Rev.F 1/3 Not Recommended for New Designs 2.60.1 3.50.2 3.50.12 0.85 3.50.05 1.750.1 8.00.2 3.713.710.080.1 3.05RB160M-60 Data Sheet 1 1000 10000 Ta=125 f=1MHz Ta=75 1000 Ta=125 Ta=75 Ta=25 0.1 100 100 Ta=-25 Ta=25 10 0.01 1 10 Ta=-25 0.1 0.01 0.001 1 0 10203040 5060 0 100 200 300 400 500 600 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) FORWARD VOLTAGEVF(mV) REVERSE VOLTAGEVR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 100 530 100 Ta=25 Ta=25 Ta=25 90 90 IF=1A VR=60V f=1MHz 520 80 n=30pcs n=30pcs 80 VR=10V n=10pcs 70 70 510 60 60 50 50 500 40 40 30 30 AVE:6.966uA AVE:37.9pF 490 20 20 AVE:495.1mV 10 10 480 0 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 30 150 100 Ta=25 IF=0.5A 25 Ifsm 1cyc Ifsm IR=1A Irr=0.25*IR 8.3ms 8.3ms 100 20 8.3ms n=10pcs 1cyc 15 50 AVE:85.0A 50 10 5 AVE:11.7ns 0 0 0 1 10 100 NUMBER OF CYCLES trr DISPERSION MAP IFSM DISRESION MAP IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 1.5 200 1000 IM=10mA IF=0.5A Ifsm Rth(j-a) t 150 1ms time 100 D=1/2 1 300us DC Sin(180) 100 10 Rth(j-c) 0.5 50 1 0 0.1 0 0.001 0.01 0.1 1 10 100 1000 00.5 11.5 2 1 10 100 AVERAGE RECTIFIED TIME:t(ms) TIME:t(s) FORWARD CURRENTIo(A) IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS Io-Pf CHARACTERISTICS www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/3 2015.09 - Rev.F Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD VOLTAGE:VF(mV) FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(uA) TRANSIENT REVERSE RECOVERY TIME:trr(ns) REVERSE CURRENT:IR(uA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN CAPACITANCE BETWEEN PEAK SURGE FORWARD POWER TERMINALS:Ct(pF) TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A) DISSIPATION:Pf(W)