RB160VAM-40TR ROHM

RB160VAM-40 Schottky Barrier Diode Data sheet Outline V 40 V R I 1 A o I 10 A FSM Features Inner Circuit High reliability Small mold type Low V F Application Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Structure Basic Ordering Unit(pcs) 3000 Silicon epitaxial planar Taping Code TR Marking G Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit V Repetitive peak reverse voltage Duty0.5 40 V RM V Reverse voltage Reverse direct voltage 40 V R Glass epoxy mounted I Average rectified forward current 1 A o 60Hz half sin waveformresistive load t=100secNon-repetitiveone cycle I Peak forward surge current 10 A FSM T =25 a (1) T Junction temperature - 150 j T Storage temperature - -40 150 stg Note(1) To avoid occurrence of thermal runaway actual board is to be designed to fulfill dP /dT<1/R . d j th(j-a) (T =25C unless otherwise specified) Characteristics j Parameter Symbol Conditions Min. Typ. Max. Unit V Forward voltage I =0.7A F 0.42 0.49 0.55 V F I Reverse current V =40V - 4 50 A R R C=100pFR=1.5k Electrostatic Discharge ESD 20 - - kV 1 discharge at each voltage polarity Attention www.rohm.com 1/5 2017/05/16 Rev.001 2016 ROHM Co., Ltd. All rights reserved.RB160VAM-40 Data sheet Characteristic Curves www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 2017/05/16 Rev.001