RB168M-60TR ROHM

Data Sheet Schottky Barrier Diode RB168M-60 lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm) General rectification 0.10.1 0.05 1.60.1 1.2 lFeatures 1)Small power mold type. (PMDU) 2)Low I R 3)High reliability 4)AEC-Q101 qualified PMDU lConstruction Silicon epitaxial 0.90.1 lStructure 0.80.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date lTaping specifications (Unit : mm) 0.250.05 1.550.05 2.00.05 4.00.1 1.810.1 4.00.1 1.00.1 1.5MAX lAbsolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Reverse voltage (repetitive) V 60 V RM Reverse voltage (DC) V 60 V R Average rectified forward current (*1) Io 1 A Forward current surge peak (60Hz1cyc) I 30 A FSM Junction temperature 150 Tj C Storage temperature Tstg -55 to +150 C (*1)Mounted on epoxy board. 180Half sine wave lElectrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions V Forward voltage - 0.63 0.68 V I =1.0A F F I V =60V Reverse current - 0.10 1.5 A R R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.08 - Rev.C 1/3 2.60.1 3.50.2 3.50.05 1.750.1 0.85 8.00.2 3.710.1 3.05Data Sheet RB168M-60 1 1000 1000000 Ta=150 Ta=125 f=1MHz 100000 Ta=75 10000 0.1 100 Ta=75 1000 Ta=25 Ta=125 100 Ta=25 0.01 10 Ta=150 10 Ta=-25 Ta= -25 1 0.1 0.001 1 0 10 20 30 40 50 60 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 REVERSE VOLTAGE : V (V) FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R R V -Ct CHARACTERISTICS V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R R 240 630 160 Ta=25 Ta=25 Ta=25 140 f=1MHz 620 I =1A F V =60V 230 R V =0V n=30pcs R n=30pcs 120 n=10pcs 610 100 220 600 80 210 60 590 40 AVE:79.1nA 200 580 AVE:207pF 20 AVE:594.1mV 570 0 190 V DISPERSION MAP I DISPERSION MAP F Ct DISPERSION MAP R 1cyc 30 150 100 8.3ms Ta=25 Ifsm 25 I =0.5A F I =1A R 8.3ms 8.3ms Irr=0.25 *I R 100 20 1cyc n=10pcs 50 15 AVE:86.0A 50 10 5 AVE:6.8ns 0 0 0 1 10 100 NUMBER OF CYCLES I DISPERSION MAP FSM trr DISPERSION MAP I -CYCLE CHARACTERISTICS FSM 1000 200 1.5 Mounted on epoxy board Rth(j-a) Ifsm t 100 150 D=1/2 1 DC Rth(j-c) 10 Sin(180) 100 0.5 1 50 0 0.1 0 0.001 0.01 0.1 1 10 100 1000 0 0.5 1 1.5 2 0.1 1 10 100 AVERAGE RECTIFIED TIME:t(ms) TIME:t(s) FORWARD CURRENTIo(A) I -t CHARACTERISTICS FSM Rth-t CHARACTERISTICS Io-Pf CHARACTERISTICS www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.08 - Rev.C 2/3 PEAK SURGE PEAK SURGE FORWARD CURRENT:I (A) FORWARD VOLTAGE:V (mV) F F FORWARD CURRENT:I (A) FORWARD CURRENT:I (A) FSM FSM TRANSIENT REVERSE CURRENT:I (nA) REVERSE RECOVERY TIME:trr(ns) REVERSE CURRENT:I (nA) R R THAERMAL IMPEDANCE:Rth ( /W) CAPACITANCE BETWEEN PEAK SURGE CAPACITANCE BETWEEN FORWARD POWER TERMINALS:Ct(pF) FORWARD CURRENT:I (A) TERMINALS:Ct(pF) FSM DISSIPATION:Pf(W)