RB215T-90 ROHM

Schottky barrier diode Datasheet RB215T-90 Applications Dimensions (Unit : mm) Structure General rectification 4.50.3 0.1 (Common cathode dual chip) 2.80.2 10.00.3 0.1 0.1 (1) (2) (3) Features 1) Small power mold type.(TO-220) R B 2 15T 2) Low I R -9 0 3) High reliability 1.2 1.3 0.8 Construction (1) (2) (3) 0.70.1 2.60.5 Silicon epitaxial planar 0.05 ROHM : O220FN Manufacture Date Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Reverse voltage (repetitive) 90 V V RM Reverse voltage (DC) V 90 V R Average rectified forward current(*1) Io 20 A Forward current surge peak (60Hz/1cyc) (*1) I 100 A FSM Junction temperature 150 Tj C Storage temperature Tstg 40 to 150 C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=110C Electrical characteristic (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V - - 0.75 V I =10A F F Reverse current I - - 400 A V =90V R R Thermal impedance - - 1.75 junction to case jc C/W www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/3 2015.09 - Rev.E Not Recommended for New Designs 5.00.2 8.00.2 12.00.2 13.5MIN 15.00.4 0.2 8.0Data Sheet RB215T-90 Electrical characteristics curves 1000000 100 10000 Ta=150 C f=1MHz 100000 Ta=125 C Ta=150 C 10 1000 10000 Ta=75C Ta=125 C 1000 1 100 Ta=25C 100 Ta=75C Ta=-25 C 0.1 10 10 Ta=-25 C Ta=25 C 1 0.01 1 0 100 200 300 400 500 600 700 800 900 100 0.1 0 0 10203040506070 8090 0 5 10 15 20 25 30 FORWARD VOLTAGE:V (mV) REVERSE VOLTAGE:V (V) REVERSE VOLTAGE:V (V) R F R V -I CHARACTERISTICS -I CHARACTERISTICS V -Ct CHARACTERISTICS V R F F R R 720 300 1300 Ta=25 C Ta=25 C 1290 Ta=25C I =10A 250 F V =90V R f=1MHz 710 1280 n=30pcs n=30pcs V =0V R 1270 200 n=10pcs 1260 700 150 1250 1240 690 AVE:1257.3pF 100 AVE:46.0uA 1230 AVE:692.7mV 1220 680 50 1210 0 1200 670 V DISPERSION MAP I DISPERSION MAP F Ct DISPERSION MAP R 300 1000 30 Ta=25 C 250 1cyc Ifsm 25 I =0.5A F I =1A R 200 8.3ms 100 20 Irr=0.25*I R n=10pcs AVE:21.6ns 150 15 AVE:168.0A 100 10 10 Ifsm 8.3ms 8.3ms 50 5 1cyc 0 1 0 110 100 I DISPERSION MAP FSM trr DISPERSION MAP NUMBER OF CYCLES I -CYCLE CHARACTERISTICS FSM 1000 100 50 IM=100mA I =10A F Ifsm DC t 40 1ms time D=1/2 Rth(j-a) 10 300us 30 100 Sin( =180) 20 Rth(j-c) 1 10 10 0.1 0 1 10 100 0.001 0.01 0.1 1 10 100 1000 0 1020 3040 50 TIME:t(s) AVERAGE RECTIFIED TIME:t(s) I -t CHARACTERISTICS FSM Rth-t CHARACTERISTICS FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/3 2015.09 - Rev.E Not Recommended for New Designs PEAK SURGE FORWARD VOLTAGE:V (mV) F FORWARD CURRENT:I (A) F FORWARD CURRENT:I (A) FSM PEAK SURGE FORWARD CURRENT:I (A) FSM TRANSIENT REVERSE CURRENT:I (uA) R THAERMAL IMPEDANCE:Rth (C/W) REVERSE CURRENT:I (uA) R REVERSE RECOVERY TIME:trr(ns) CAPACITANCE BETWEEN PEAK SURGE CAPACITANCE BETWEEN FORWARD POWER TERMINALS:Ct(pF) FORWARD CURRENT:I (A) TERMINALS:Ct(pF) FSM DISSIPATION:Pf(W)