RB168LAM150TFTR ROHM

RB168LAM150TF Schottky Barrier Diode (AEC-Q101 qualified) Data sheet Outline V 150 V R I 1 A o I 50 A FSM Features Inner Circuit High reliability Small power mold type Super low I R Application Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 12 Structure Quantity(pcs) 3000 Silicon epitaxial planar Taping Code TR Marking L1 Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit V Repetitive peak reverse voltage Duty0.5 150 V RM V Reverse voltage Reverse direct voltage 150 V R Glass epoxy mounted I 60Hz half sin waveformresistive load Average rectified forward current 1 A o T =130 Max. c 60Hz half sin waveformNon-repetitive I Peak forward surge current 50 A FSM one cycleT =25 a T Junction temperature - 150 j T Storage temperature - -55 150 stg (T =25C unless otherwise specified) Characteristics j Parameter Symbol Conditions Min. Typ. Max. Unit V Forward voltage I =1A - - 0.84 V F F Reverse current I V =150V - - 2.5 A R R Attention www.rohm.com 1/5 2016- ROHM Co., Ltd. All rights reserved. 2019/05/28 Rev.002RB168LAM150TF Data sheet Characteristic Curves www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 2019/05/28 Rev.002