RB168M150TR ROHM

Data Sheet Schottky Barrier Diode RB168M150 lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm) General rectification 0.10.1 0.05 1.60.1 1.2 lFeatures 1)Small power mold type. (PMDU) 2)High reliability 3)AEC-Q101 qualified PMDU lConstruction lStructure 0.90.1 Silicon epitaxial planer 0.80.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date lTaping dimensions (Unit : mm) 0.250.05 1.550.05 4.00.1 2.00.05 1.810.1 4.00.1 1.00.1 1.5MAX lAbsolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Reverse voltage (repetitive) V 150 V RM Reverse voltage (DC) V 150 V R Average rectified forward current (*1) Io 1 A Forward current surge peak (60Hz1cyc) I 30 A FSM Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C (*1) Business frequence, R-road, Tc=110C max. lElectrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions V I =1A Forward voltage - 0.76 0.84 V F F Reverse current I - 0.11 20 A V =150V R R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.08 - Rev.B 1/4 2.60.1 3.50.2 3.50.05 1.750.1 0.85 8.00.2 3.710.1 3.05Data Sheet RB168M150 1 1000 Ta=125 C Ta=150 C Ta=150 C 100 10 Ta=125 C Ta=75 C 1 Ta=75 C 0.1 Ta=25 C 0.1 0.01 Ta=25 C Ta=-25 C 0.001 Ta=-25 C 0.01 0.0001 200 400 600 800 1000 0 50 100 150 REVERSE VOLTAGE V (V) FORWARD VOLTAGEV (mV) R F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 1000 800 f=1MHz Ta=25 C I =1A F n=30pcs 790 780 100 770 AVE:756.9mV 760 10 750 0 5 10 15 20 25 30 V DISPERSION MAP F REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R 200 120 Ta=25 C Ta=25 C f=1MHz V =150V R 115 V =0V n=30pcs R n=10pcs 150 110 AVE:106.8nA 105 100 100 AVE:95.0pF 95 50 90 Ct DISPERSION MAP I DISPERSION MAP R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.08 - Rev.B 2/4 CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R FORWARD CURRENT:I (A) F TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) F REVERSE CURRENT:I ( mA) R TERMINALS:Ct(pF)