RB205T-90 ROHM

Data Sheet Schottky barrier diode RB205T-90 Applications Dimensions (Unit : mm) Structure Switching power supply Features 1) Cathode common type. (1) (2) (3) (TO-220) 2) Low I R 3) High reliability 205 9 Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 90 V RM Reverse voltage (DC) V 90 V R 15 Average rectified forward current (*1) Io A 100 Forward current surge peak (60Hz / 1cyc) (*1) I A FSM Junction temperature Tj 150 C Storage temperature Tstg 40 to 150 C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=121 C Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - - 0.78 V I =7.5A F F I Reverse current - - 300 A V =90V R R Thermal impedance -- 2 junction to case jc C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.E Not Recommended for New DesignsRB205T-90 Data Sheet Electrical characteristic curves 10 100000 Ta=150 Ta=125 1000 Ta=150 f=1MHz 10000 Ta=125 Ta=75 1000 Ta=75 1 100 100 Ta=25 Ta=25 Ta=-25 10 0.1 10 Ta=-25 1 0.1 1 0.01 0.01 0 5 10 15 20 25 30 0 10203040 50607080 90 0 100 200 300 400 500 600 700 800 900 REVERSE VOLTAGE V (V) REVERSE VOLTAGE:V (V) FORWARD VOLTAGE V (mV) R F R V -I CHARACTERISTICS V -I CHARACTERISTICS V -Ct CHARACTERISTICS F F R R R 900 770 200 Ta=25 Ta=25 Ta=25 890 180 f=1MHz I =7.5A V =90V F R V =0V 880 R 760 n=30pcs 160 n=30pcs n=10pcs 870 140 860 750 120 850 100 840 740 80 AVE:25.4uA 830 60 820 730 40 810 AVE:850.3pF AVE:735.7mV 20 800 0 720 V DISPERSION MAP I DISPERSION MAP F R Ct DISPERSION MAP 300 30 1000 Ta=25 I =0.5A F Ifsm 250 25 I =1A R Ifsm 1cyc Irr=0.25*I 8.3ms 8.3ms R 200 20 n=10pcs 8.3ms 1cyc 100 150 15 100 10 50 AVE:12.4ns 5 AVE:157.0A 10 0 0 1 10 100 I DISPERSION MAP trr DISPERSION MAP FSM NUMBER OF CYCLES I -CYCLE CHARACTERISTICS FSM 1000 30 100 I =7.5A IM=100mA F 25 Ifsm 1ms t DC time Rth(j-a) 20 10 D=1/2 300us Sin(=180) 100 15 10 1 Rth(j-c) 5 10 0 0.1 110 100 0 5 10 15 20 25 30 0.001 0.01 0.1 1 10 100 1000 TIME:t(ms) AVERAGE RECTIFIED TIME:t(s) I -t CHARACTERISTICS FORWARD CURRENT : Io(A) FSM Rth-t CHARACTERISTICS Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.E Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD CURRENT:I (A) FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) FSM FORWARD CURRENT:I (A) F F FSM TRANSIENT REVERSE CURRENT:I (uA) REVERSE CURRENT:I (uA) R REVERSE RECOVERY TIME:trr(ns) R THAERMAL IMPEDANCE:Rth ( /W) CAPACITANCE BETWEEN PEAK SURGE CAPACITANCE BETWEEN FORWARD POWER TERMINALS:Ct(pF) FORWARD CURRENT:I (A) TERMINALS:Ct(pF) FSM DISSIPATION:Pf(W)