RB238T-60NZC9 ROHM

Schottky Barrier Diode RB238T-60NZ Datasheet Application Dimensions (Unit : mm) Structure Switching power supply Features 1) Cathode common dual type (1) (2) (3) 2) High reliability Cathode Anode Anode 3) Super low I R Construction ROHM : TO220FN Silicon epitaxial planar type 1 : Manufacture date Package Dimensions (Unit : mm) 7 540 Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 60 Repetitive peak reverse voltage V RM Reverse voltage V Direct reverse voltage 60 V R 60Hz half sin wave, resistive load, I Average forward rectified current 40 A o I /2 per diode, T =85C Max. O c 60Hz half sin wave, Non-repetitive at Non-repetitive forward current surge peak I 100 A FSM T =25C , 1cycle, per diode a Operating junction temperature T - 150 C j T Storage temperature - 55 to 150 C stg Electrical and Thermal Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit V I =20A Forward voltage - - 0.86 V F F V =60V I Reverse current -- 12 A R R Thermal resistance R Junction to case -- 2 C/W th(j-c) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2017.07 - Rev.B 1/3 34.5Datasheet RB238T-60NZ Electrical Characteristic Curves 100 10000 1000 T = 150 C j 10 T = 75 C j 100 T = 125 C T = 150 C j j 10 T = 125 C 1 j T = 25 C j 1 T = 75 C j 0.1 0.1 T = 25 C j T = 25 C j 0.01 0.01 T = 25 C j 0.001 0.001 0.0001 0 200 400 600 800 1000 1200 0 102030 405060 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 50 300 T = 150 C T = 150 C j j 250 40 D = 1/2 200 30 Sin(=180) DC 150 Sin(=180) 20 D = 1/2 100 DC 10 50 0 0 0 1020 304050 6070 0 10 2030405060 AVERAGE RECTIFIED REVERSE VOLTAGE : V (V) R FORWARD CURRENT : I (A) o V -P CHARACTERISTICS R R I -P CHARACTERISTICS o F www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2017.07 - Rev.B 2/3 FORWARD POWER FORWARD CURRENT : I (A) F DISSIPATION : P (W) F REVERSE POWER REVERSE CURRENT : I ( A) R DISSIPATION : P (mW) R