RB521S-40TE61 ROHM

Data Sheet Schottky barrier diode RB521S-40 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) Rectifying small power 0.80.05 0.120.05 0.8 Features 1) Ultra small mold type. (EMD2) 2) Low V F EMD2 3) High reliability Structure 0.30.05 Construction 0.60.1 Silicon epitaxial planar ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping dimensions (Unit : mm) 0.20.05 1.50.05 4.00.1 2.00.05 1.55 0.05 0.5 0.2 0.950.06 4.00.1 2.00.05 0.90 0.05 Empty poc ket 0.760.05 0.750.05 0 Absolute maximum ratings Ta=25 Parameter Limits Symbol Unit Reverse voltage (repetitive peak) 45 VRM V Reverse voltage (DC) V 40 V R Average retified forward current Io 200 mA Forward currnt surge peak(60Hz/1cyc) I 4 A FSM Junction temperature 150 Tj Storage temperature -55 to +150 Tstg Electrical characteristic (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions I =10mA 0.16 0.26 0.30 F Forward voltage V 0.31 0.395 0.45 V I =100mA F F I =200mA 0.41 0.495 0.54 F V =10V - 3.5 20 R Reverse current I A R V =40V -13 90 R C=100pF, R=1.5k ESD break down voltage ESD 10 - -kV forward and reverse : 1time www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.03 - Rev.B 1/3 Last Time Buy 2.400.05 2.450.1 1.1.235 0.0.0066 00 1.20.05 1.60.1 0.6 0.6 3.50.05 1.750.1 8.00.15 1.7 1.25 0.06 1.260.05 0 0RB521S-40 Data Sheet Electrical characteristic curves 100 1000 100000 Ta=150 f=1MHz 10000 Ta=125 Ta=75 1000 Ta=75 100 Ta=125 100 Ta=150 Ta=25 10 Ta=-25 10 10 1 Ta=-25 Ta=25 0.1 0.01 1 1 0 102030 0 100 200 300 400 500 600 010 20 30 REVERSE VOLTAGE : V (V) FORWARD VOLTAGE : V (mV) R F REVERSE VOLTAGE : V (V) R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R V -Ct CHARACTERISTICS R 100 30 520 Ta=25 90 Ta=25 Ta=25 29 V =40V R I =200mA 80 f=1MHz F n=30pcs 510 28 V =0V n=30pcs R 70 n=10pcs 27 60 500 26 50 AVE:27.2pF 25 40 490 24 30 AVE:495.2mV 23 AVE:6.86uA 20 480 22 10 21 0 470 20 V DISPERSION MAP I DISPERSION MAP Ct DISPERSION MAP F R 20 10 10 1cyc Ifsm Ifsm 15 Ifsm t 8.3ms 8.3ms 8.3ms 1cyc 5 10 5 5 AVE:5.60A 0 0 0 1 10 100 1 10 100 TIME : t(ms) NUMBER OF CYCLES I DISPERSION MAP FSM I -CYCLE CHARACTERISTICS I -t CHARACTERISTICS FSM FSM 1000 0.3 5 Rth(j-a) D=1/2 0.25 4 Rth(j-c) 0.2 3 DC D=1/2 100 Mounted on epoxy board 0.15 Sin(180) 2 IM=1mA I =20mA F DC 0.1 Sin(180) 1 time 1ms 0.05 300us 10 0 0 0.001 0.1 10 1000 0 1020 3040 0 0.1 0.2 0.3 0.4 REVERSE VOLTAGE : V (V) TIME : (s) R AVERAGE RECTIFIED Rth-t CHARACTERISTICS V -P CHARACTERISTICS R R FORWARD CURRENT : Io(A) Io-P CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.03 - Rev.B Last Time Buy PEAK SURGE FORWARD VOLTAGE : V (mV) F TRANSIENT FORWARD CURRENT : I (A) FSM FORWARD CURRENT : IF(mA) THAERMAL IMPEDANCE : Rth (/W) FORWARD POWER DISSIPATION:Pf(W) PEAK SURGE REVERSE CURRENT : I (uA) R REVERSE CURRENT : V (uA) R FORWARD CURRENT : I (A) FSM REVERSE POWER PEAK SURGE CAPACITANCE BETWEEN CAPACITANCE BETWEEN TERMINALS : DISSIPATIONP (w) R FORWARD CURRENT : I (A) TERMINALS:Ct(pF) FSM Ct(pF)