RB530S-30TE61 ROHM

Data Sheet Schottky barrier Diode RB530S-30 Land size figure (Unit : mm) Applications Dimensions (Unit : mm) General rectification 0.8 Features 1)Ultra small mold type. (EMD2) 2)Low I R 3)High reliability EMD2 Construction Structure Silicon epitaxial planer Taping specifications (Unit : mm) 0.20.05 1.50.05 2.00.05 4.00.1 1.550.05 0.2 0.5 4.00.1 2.00.05 0.950.06 0.90 0.05 Empty pocket 0.760.05 0.750.05 0 Absolute maximum ratings (Ta=25 C) Parameter Limits Symbol Unit Reverse voltage (DC) V 30 V R Average rectified forward current Io 100 mA Forward current surge peak (60Hz/1cyc) I 500 mA FSM Junction temperature 125 Tj C Storage temperature -40 to +125 Tstg C Electical characteristics (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit V I =10mA Forward voltage - - 0.45 V F F Reverse current I V =10V - - 0.5 A R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.03 - Rev.B 1/3 Last Time Buy 2.2.40450.0.015 1.1.2530.0.0606 00 0.6 0.6 3.50.05 1.750.1 8.00.15 1.25 0.06 1.260.05 0 0 1.7RB530S-30 Data Sheet Electical characteristics curves 100 1000000 1000 Ta=125 f=1MH Ta=125 C 100000 100 Ta=75 C 10000 10 Ta=75 C 1000 Ta=25 C 1 10 Ta=-25 C 100 0.1 10 Ta=25 C Ta=-25 C 0.01 1 0.1 0.001 1 0 100 200 300 400 500 600 010 20 30 0 5 10 15 20 REVERSE VOLTAGE : V (V) FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) R F R V -I CHARACTERISTICS V -Ct CHARACTERISTICS V -I CHARACTERISTICS R R R F F 370 1000 20 Ta=25 C Ta=25 C 19 900 V =10mA F Ta=25 C V =10V 360 R n=30pcs 18 f=1MHz 800 n=30pcs V =0V R 700 17 n=10pcs 350 16 600 500 15 AVE : 16.28pF 340 400 14 13 300 AVE : 347.5mV AVE : 108.3nA 330 200 12 100 11 10 320 0 I DISPERSION MAP R V DISPERSION MAP F Ct DISPERSION MAP 20 10 10 1cyc Ifsm Ifsm Ifsm t 15 8.3ms 8.3ms 8.3ms 1cyc 5 10 5 AVE : 4.20A 5 0 0 0 1 10 100 1 10 100 NUMBER OF CYCLES TIME : t(ms) I DISRESION MAP FSM I -CYCLE CHARACTERISTICS I -t CHARACTERISTICS FSM FSM 0.1 1000 0.02 DC 0.08 D=1/2 Rth(j-a) 0.015 100 0.06 Rth(j-c) Sin(=180) 0.01 0.04 10 DC 0.02 0.005 D=1/2 Sin(=180) 0 1 0 0.05 0.1 0.15 0.2 0 0.001 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 30 TIME : t(s) AVERAGE RECTIFIED REVERSE VOLTAGE : V (V) R Rth-t CHARACTERISTICS FORWARD CURRENT : Io(A) V -P CHARACTERISTICS R R Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.03 - Rev.B Last Time Buy TRANSIENT PEAK SURGE FORWARD VOLTAGE : V (mV) FORWARD CURRENT : I (mA) F F THAERMAL IMPEDANCE : Rth ( C/W) FORWARD CURRENT : I (A) FSM FORWARD POWER REVERSE CURRENT : I (nA) R PEAK SURGE REVERSE CURRENT : I (nA) R DISSIPATION : Pf(W) FORWARD CURRENT : I (A) FSM REVERSE POWER CAPACITANCE BETWEEN DISSIPATION : P (W) CAPACITANCE BETWEEN R PEAK SURGE TERMINALS : Ct(pF) TERMINALS : Ct(pF) FORWARD CURRENT : I (A) FSM