RB550VA-30TR ROHM

Schottky Barrier Diode RB550VA-30 Data Sheet lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm) General rectification 1.1 0.170.1 0.05 1.30.05 lFeatures 1)Small mold type TUMD2 2)Low V Low I F, R 3)High reliability TUMD2 lConstruction Silicon epitaxial planar lStructure 0.80.05 0.60.2 ROHM : TUMD2 0.1 dot (year week factory) + day lTaping specifications (Unit : mm) 1.550.1 0.250.05 4.00.1 2.00.05 0 1.430.05 4.00.1 1.00.2 0 0.90.08 lAbsolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit V Reverse voltage (repetitive) 30 V RM Reverse voltage (DC) V 30 V R Average rectified forward current 1 Io A Forward current surge peak (60Hz1cyc) I 3 A FSM Junction temperature Tj 150 C Storage temperature -40 to +150 Tstg C lElectrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions V 1 - 0.45 0.49 V I =700mA F F Forward voltage V 2 - 0.48 0.52 V I =1A F F V =10V Reverse current I - 1 30 A R R www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.12 - Rev.E 1/3 Not Recommended for New Designs 1.90.1 2.50.2 3.50.05 1.750.1 2.75 8.00.2 2.80.05 0.8 0.5 2.0Data Sheet RB550VA-30 100000 1 1000 Ta=75 Ta=150 f=1MHz 10000 Ta=125 Ta=125 1000 0.1 Ta=150 100 Ta=25 Ta=75 100 Ta=-25 10 Ta=25 0.01 10 1 Ta=-25 0.1 0.01 0.001 1 0 5 10 15 20 25 30 0 100 200 300 400 500 600 0 5 10 15 20 25 30 FORWARD VOLTAGEVF(mV) REVERSE VOLTAGE:VR(V) REVERSE VOLTAGEVR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 490 200 30 Ta=25 Ta=25 Ta=25 190 IF=0.7A f=1MHz VR=30V 25 480 n=30pcs 180 n=30pcs VR=0V n=10pcs 170 20 470 160 15 150 460 140 10 130 AVE:3.141uA 450 120 5 AVE:149.9pF 110 AVE:459.6mV 0 440 100 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 30 20 30 Ta=25 Ifsm Ifsm 1cyc IF=0.5A 25 25 Ifsm IR=1A 15 8.3ms 8.3ms Irr=0.25*IR 8.3ms 8.3ms 8.3ms 20 20 n=10pcs 1cyc 1cyc 15 15 10 AVE:15.1A 10 10 5 AVE:8.3ns 5 5 0 0 0 1 10 100 trr DISPERSION MAP NUMBER OF CYCLES IFSM DISRESION MAP IFSM-CYCLE CHARACTERISTICS 30 1 Mounted on epoxy board 1000 IM=10mA IF=0.2A 25 Ifsm 0.8 t time 1ms Rth(j-a) 20 D=1/2 300us 0.6 Sin( 180) 15 100 Rth(j-c) DC 0.4 10 0.2 5 0 0 10 0 0.5 1 1.5 1 10 100 0.001 0.1 10 1000 AVERAGE RECTIFIED TIME:t(ms) TIME:t(s) FORWARD CURRENTIo(A) IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS Io-Pf CHARACTERISTICS www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.12 - Rev.E 2/3 Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD VOLTAGE:VF(mV) FORWARD CURRENT:IF(A) FORWARD CURRENT:IFSM(A) REVERSE CURRENT:IR(uA) TRANSIENT REVERSE CURRENT:IR(nA) REVERSE RECOVERY TIME:trr(ns) THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE CAPACITANCE BETWEEN CAPACITANCE BETWEEN FORWARD POWER FORWARD CURRENT:IFSM(A) TERMINALS:Ct(pF) TERMINALS:Ct(pF) DISSIPATION:Pf(W)