RBE2VA20ATR ROHM

Data Sheet Schottky Barrier Diode RBE2VA20A lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm) Rectifying Small Power 1.1 0.170.1 0.05 1.30.05 lFeatures 1)Small Power Mold Type (TUMD2) 2)High reliability TUMD2 lStructure 0.80.05 0.60.2 ROHM : TUMD2 0.1 dot (year week factory) lTaping dimensions (Unit : mm) 1.550.1 0.250.05 2.00.05 4.00.1 0 4.00.1 1.00.2 1.430.05 0 0.90.08 lAbsolute maximum ratings (Tc=25 C) Parameter Symbol Limits Unit Reverse voltage (repetitive) V 30 V RM Reverse voltage (DC) V 20 V R Average rectified forward current Io 2 A Forward current surge peak (60Hz1cyc) I 5 A FSM Junction temperature Tj 125 C Storage temperature Tstg -40 to +125 C lElectrical characteristics (Tj=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions V 1 I =1A - - 0.39 V F F Forward voltage V 2 - - 0.46 V I =2A F F I V =20V Reverse current - - 700 A R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/4 Not Recommended for New Designs 1.90.1 2.50.2 3.50.05 1.750.1 2.75 8.00.2 2.80.05 2.0 0.8 0.5Data Sheet RBE2VA20A 100 10 Ta=125 C Ta=125 C 10 1 Ta=75 C 1 Ta=75 C Ta=25 C 0.1 0.1 Ta=25 C Ta=-25 C 0.01 0.01 Ta=-25 C 0.001 0.001 0 100 200 300 400 500 0 5 10 15 20 25 30 REVERSE VOLTAGEV (V) R FORWARD VOLTAGEV (mV) F V -I CHARACTERISTICS R R V -I CHARACTERISTICS F F 1000 450 f=1MHz 440 Ta=25 C I =2A F 430 n=30pcs 420 100 AVE:397.8mV 410 400 390 10 380 370 360 1 350 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) V DISPERSION MAP R F V -Ct CHARACTERISTICS R 250 500 Ta=25 C 450 Ta=25 C f=1MHz V =20V R 240 V =0V 400 n=30pcs R n=10pcs 350 AVE:254.3A 300 230 250 200 220 AVE:211pF 150 210 100 50 200 0 Ct DISPERSION MAP I DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 2/4 Not Recommended for New Designs REVERSE CURRENT:I (A) CAPACITANCE BETWEEN R FORWARD CURRENT:I (A) F TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) F TERMINALS:Ct(pF) REVERSE CURRENT:I (mA) R