RBQ10T65A ROHM

Schottky Barrier Diode RBQ10T65A Datasheet Application Dimensions (Unit : mm) Structure General rectification 0.3 4.5 0.1 0.3 10.0 0.2 0.1 2.8 0.1 3.20.2 Features 1) Cathode common type. (1) (2) (3) Anode Cathode Anode 2) Low I R 3) High reliability 1.2 1.3 2.60.5 0.8 Construction 0.1 0.75 0.05 Silicon epitaxial planar 2.45 0.5 2.45 0.5 ROHM : TO220FN (1) (2) (3) : Manufacture date Absolute maximum ratings (Tc= 25C) Parameter Symbol Limits Unit V 65 Reverse voltage (repetitive) V RM Reverse voltage (DC) V 65 V R Average rectified forward current (*1) Io 10 A I 50 Forward current surge peak (60Hz1cyc) A FSM 150 Junction temperature Tj C Storage temperature Tstg 40 to 150 C (*1) Rating of per diode : Io/2 Electrical characteristics (Tj = 25C) Parameter Conditions Symbol Min. Typ. Max. Unit V I =5A Forward voltage - - 0.69 V F F I V =65V Reverse current - - 150 A R R www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.07 - Rev.D 1/5 Not Recommended for New Designs 5.0 0.2 8.00.2 14.00.5 12.00.2 0.4 15.0 0.2Data Sheet RBQ10T65A Electrical characteristic curves 10 100000 Ta = 150 C 10000 Ta = 150 C 1000 Ta = 125 C 1 Ta = 125 C 100 Ta = 75 C Ta = 75 C 10 Ta = 25 C 0.1 1 Ta = 25 C Ta = 25 C 0.1 Ta = 25 C 0.01 0.01 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 700 Ta=25 C f = 1MHz 690 I =5A F 680 n=30pcs 670 100 660 650 AVE : 629.1mV 640 10 630 620 610 1 600 0 5 10 15 20 25 30 REVERSE VOLTAGE : V (V) R V DISPERSION MAP F V -Ct CHARACTERISTICS R www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.07 - Rev.D 2/5 Not Recommended for New Designs CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : Ct(pF) FORWARD VOLTAGE : V (mV) REVERSE CURRENT : I ( A) F R