X-On Electronics has gained recognition as a prominent supplier of RBQ20NS45ATL Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. RBQ20NS45ATL Schottky Diodes & Rectifiers are a product manufactured by ROHM. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

RBQ20NS45ATL ROHM

RBQ20NS45ATL electronic component of ROHM
RBQ20NS45ATL ROHM
RBQ20NS45ATL Schottky Diodes & Rectifiers
RBQ20NS45ATL  Semiconductors

Images are for reference only
See Product Specifications
Part No. RBQ20NS45ATL
Manufacturer: ROHM
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers ROHM's schottky barrier diodes are low VF, low IR and high ESD resistant, suitable for PC,mobile phone and various portable electronics. Diode (Rectifier FRD) 45V-VRM 45V-VR 20A-IO 100A-IFSM Dual C Common
Datasheet: RBQ20NS45ATL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.8 ea
Line Total: USD 1.8 
Availability - 92
Ship by Wed. 30 Apr to Fri. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
92
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 1.8
10 : USD 1.236
100 : USD 0.8415
500 : USD 0.6941
1000 : USD 0.6413
2000 : USD 0.5852
5000 : USD 0.583

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RBQ20NS45ATL from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RBQ20NS45ATL and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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RBQ20NS45A Schottky Barrier Diode Data sheet Outline V 45 V R I 20 A o I 100 A FSM Features Inner Circuit High reliability Power mold type Cathode common dual type Low I R Application Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 Structure Quantity(pcs) 1000 Silicon epitaxial planar Taping Code TL Marking BQ20NS45A Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty0.5 45 V RM Reverse voltage V Reverse direct voltage 45 V R 60Hz half sin waveformresistive load Average rectified forward current I 20 A o I /2 per diodeT =115Max. o c 60Hz half sin waveform Peak forward surge current I 100 A FSM non-repetitiveper diodeT =25 a (1) Junction temperature T - 150 j Storage temperature T - -55 150 stg Note(1) To avoid occurrence of thermal runaway actual board is to be designed to fulfill dP /dT<1/R . d j JA Attention www.rohm.com 1/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003RBQ20NS45A Data sheet Electrical Characteristics (T =25C unless otherwise specified) j Parameter Symbol Conditions Min. Typ. Max. Unit (1) V Forward voltage I =10A - 0.54 0.65 V F F I V =40V - 15 80 A R1 R (1) Reverse current I V =45V - 30 140 A R2 R Note (1) Value per diode Thermal Characteristics Parameter Symbol Min. Typ. Max. Unit Per diode - - 1.6 /W (1) (2) R Thermal Resistance (Junction to case) JC Per device - - 1.0 /W (1) (3) R Thermal Resistance (Junction to ambient) JA - - 55 /W Notes (1) Value is guaranteed by design. (2) Transient dual interface measurement (TDIM) method. (3) Mounted on 50 x 50 x 1.6mm FR4 boardsingle-sided copper35m thicknessreference footprint. Characteristic Curves www.rohm.com 2/6 2018- ROHM Co., Ltd. All rights reserved. 2019/05/27 Rev.003

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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