RBR10T30ANZC9 ROHM

Schottky Barrier Diode RBR10T30ANZ Datasheet Application Dimensions (Unit : mm) Structure Switching power supply Features (1) (2) (3) Anode Cathode Anode 1) Cathode common dual type 2) High reliability Low V 3) F Construction ROHM : TO220FN 1 Manufacture date Silicon epitaxial planar type Package Dimensions (Unit : mm) 7 540 Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Repetitive Peak Reverse Voltage Duty0.5 30 V RM V Reverse Voltage Direct Reverse Voltage 30 V R 60Hz half sin Wave, resistive load, Average Forward Rectified Current I 10 A o I /2 per diode, T =135C Max. O c 60Hz half sin wave, Non-repetitive at Non-repetitive Forward Current Surge Peak I 50 A FSM T =25C, 1cycle, per diode a T Operating Junction Temperature - 150 C j T Storage Temperature - 55 to 150 C stg Electrical and Thermal Characteristics (T = 25C) j Parameter Conditions Symbol Min. Typ. Max. Unit V I =5A Forward Voltage - - 0.55 V F F I V =30V Reverse Current - - 100 A R R R Junction to Case Thermal Resistance -- 2 C/W th(j-c) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2017.07 - Rev.B 1/5 34.5Datasheet RBR10T30ANZ Electrical Characteristic Curves 10 100000 T = 150 C j T = 150 C 10000 j T = 75 C j T = 125 C j T = 125 C 1000 j 1 T = 25 C 100 j T = 75 C j 10 0.1 T = 25 C j 1 T = 25 C j 0.1 T = 25 C j 0.01 0.01 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 560 50 T=25 C T=25 C j j V =30V I =5A R F 540 40 n=30pcs n=30pcs Ave. : 24.0 A 520 30 Ave. : 496mV 500 20 480 10 460 0 V DISPERSION MAP I DISPERSION MAP F R www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2017.07 - Rev.B 2/5 FORWARD VOLTAGE : V (mV) FORWARD CURRENT : I (A) F F REVERSE CURRENT : I ( A) R REVERSE CURRENT : I ( A) R