RBR1LAM30ATFTR ROHM

RBR1LAM30ATF Schottky Barrier Diode (AEC-Q101 qualified) Data sheet Outline V 30 V R I 1 A o I 40 A FSM Features Inner Circuit High reliability Small power mold type Low V F Application Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 12 Structure Quantity(pcs) 3000 Silicon epitaxial planar Taping Code TR Marking C6 Absolute Maximum Ratings (T =25C unless otherwise specified) c Parameter Symbol Conditions Limits Unit V Repetitive peak reverse voltage Duty0.5 30 V RM V Reverse voltage Reverse direct voltage 30 V R Glass epoxy mounted I 60Hz half sin waveformresistive load Average rectified forward current 1 A o T =135 Max. c 60Hz half sin waveformNon-repetitive I Peak forward surge current 40 A FSM one cycleT =25 a (1) T Junction temperature - 150 j T Storage temperature - -55 150 stg Note(1) To avoid occurrence of thermal runaway actual board is to be designed to fulfill dP /dT<1/R . d j th(j-a) (T =25C unless otherwise specified) Characteristics j Parameter Symbol Conditions Min. Typ. Max. Unit V Forward voltage I =1A - - 0.48 V F F Reverse current I V =30V - - 50 A R R Attention www.rohm.com 1/5 2016- ROHM Co., Ltd. All rights reserved. 2019/05/28 Rev.002RBR1LAM30ATF Data sheet Characteristic Curves www.rohm.com 2/5 2016 ROHM Co., Ltd. All rights reserved. 2019/05/28 Rev.002