BAS85-M www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES For general purpose applications This diode features low turn-on voltage The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges AEC-Q101 qualified DESIGN SUPPORT TOOLS click logo to get started Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Models Available APPLICATIONS MECHANICAL DATA Applications where a very low forward voltage is required Case: MiniMELF (SOD-80) Weight: approx. 31 mg Cathode band color: black Packaging codes/options: 18/10K per 13 reel (8 mm tape), 10K/box 08/2.5K per 7 reel (8 mm tape), 12.5K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION REMARKS BAS85-M BAS85-M-18 or BAS85-M-08 Single Tape and reel ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Continuous reverse voltage V 30 V R (1) Forward continuous current I 200 mA F (1) Peak forward current I 300 mA FM (1) Surge forward current t < 1 s I 600 mA p FSM (1) Power dissipation T = 65 C P 200 mW amb tot Note (1) Valid provided that electrodes are kept at ambient temperature. THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 430 K/W thJA Junction temperature T 125 C j Storage temperature range T -55 to +150 C stg Note (1) Valid provided that electrodes are kept at ambient temperature. ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage I = 10 A (pulsed) V 30 V R (BR) Leakage current V = 25 V I 0.2 2 A R R Pulse test t < 300 s, I = 0.1 mA V 240 mV p F F Pulse test t < 300 s, I = 1 mA V 320 mV p F F Forward voltage Pulse test t < 300 s, I = 10mA V 400 mV p F F Pulse test t < 300 s, I = 30 mA V 500 mV p F F Pulse test t < 300 s, I = 100 mA V 800 mV p F F Diode capacitance V = 1 V, f = 1 MHz C 10 pF R D Reverse recovery time I = 10 mA, I = 10 mA, i = 1 mA t 5ns F R R rr Rev. 1.2, 02-Jun-17 Document Number: 83403 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAS85-M www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 200 V = 30 V 180 R T = 125 C j 160 100 140 R = 540 kW thJA T = 25 C 120 j P - Limit R 10 100 at 100 % V R 80 P - Limit 60 R 1 at 80 % V R 40 20 0.1 0 0 0.5 1.0 1.5 25 50 75 100 125 150 V - Forward Voltage (V) 15822 15824 F T - Junction Temperature (C) j Fig. 1 - Max. Reverse Power Dissipation vs. Fig. 3 - Forward Current vs. Forward Voltage Junction Temperature 1000 10 9 f = 1 MHz V = V R RRM 8 7 100 6 5 4 10 3 2 1 1 0 0.1 1 10 100 25 50 75 100 125 150 15825 15823 T - Junction Temperature (C) V - Reverse Voltage (V) R j Fig. 2 - Reverse Current vs. Junction Temperature Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 1.2, 02-Jun-17 Document Number: 83403 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current (A) P - Reverse Power Dissipation (mW) R R I - Forward Current (mA) F C - Diode Capacitance (pF) D
