RD3S100AAFRA Datasheet Nch 190V 10A Power MOSFET llOutline V 190V DSS DPAK R (Max.) 182m DS(on) TO-252 I 10A D P 85W D llFeatures llInner circuit 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) RoHS compliant 5) AEC-Q101 Qualified llApplication llPackaging specifications Switching Power Supply Packing Embossed Tape Taping code TL Marking RD3S100AA Quantity (pcs) 2500 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 190 V DSS *1 Continuous drain current (T = 25C) I 10 A c D *2 Pulsed drain current I 40 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 5.0 A AS *3 Avalanche energy, single pulse E 8.33 mJ AS Power dissipation (T = 25C) P 85 W c D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/12 20190731 - Rev.002 RD3S100AAFRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R Thermal resistance, junction - case - - 1.46 /W thJC *5 R Thermal resistance, junction - ambient - - 100 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 190 - - V (BR)DSS GS D voltage Zero gate voltage I V = 190V, V = 0V - - 10 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 0.5 - 2.5 V GS(th) DS D V = 10V, I = 5.0A - 130 182 GS D Static drain - source *6 R m DS(on) on - state resistance V = 4.0V, I = 5.0A - 136 190 GS D R Gate resistance f = 1MHz, open drain - 4.5 - G www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/12 20190731 - Rev.002