RD3U041AAFRA Datasheet Nch 250V 4A Power MOSFET llOutline V 250V DSS DPAK R (Max.) 1.3 DS(on) TO-252 I 4.0A D P 29W D llInner circuit llFeatures 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Pb-free plating RoHS compliant 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 16 Type Switching Power Supply Quantity (pcs) 2500 Taping code TL Marking RD3U041AA llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 250 V DSS *1 Continuous drain current (T = 25C) I 4.0 A c D *2 I Pulsed drain current 16 A DP Gate - Source voltage V 30 V GSS *3 Avalanche current, single pulse I 2.0 A AS *3 E Avalanche energy, single pulse 1.61 mJ AS *4 Power dissipation (T = 25C) P 29 W c D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20191024 - Rev.003 RD3U041AAFRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 Thermal resistance, junction - case R - - 4.3 /W thJC *5 R Thermal resistance, junction - ambient - - 100 /W thJA T Soldering temperature, wavesoldering for 10s - - 265 sold llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 250 - - V (BR)DSS GS D voltage Zero gate voltage I V = 250V, V = 0V - - 10 A DSS DS GS drain current I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 3.5 - 5.5 V GS(th) DS D Static drain - source *6 R V = 10V, I = 2.0A - 0.93 1.3 DS(on) GS D on - state resistance Gate resistance R f = 1MHz, open drain - 4.0 - G www.rohm.com 2/11 20191024 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.