X-On Electronics has gained recognition as a prominent supplier of RF2001NS3DFHTL Rectifiers across the USA, India, Europe, Australia, and various other global locations. RF2001NS3DFHTL Rectifiers are a product manufactured by ROHM. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

RF2001NS3DFHTL ROHM

RF2001NS3DFHTL electronic component of ROHM
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See Product Specifications
Part No.RF2001NS3DFHTL
Manufacturer: ROHM
Category: Rectifiers
Description: RECTIFIER, AEC-Q101, 20A, 350V, TO-263
Datasheet: RF2001NS3DFHTL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.9519 ea
Line Total: USD 1.95 
Availability - 817
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1

 RF2001NS3DFHTL More Buying Options & Price Grid(s)

Availability Price Quantity
817
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.9519
10 : USD 1.5939
100 : USD 1.2012
500 : USD 1.0106
1000 : USD 1.0083
2000 : USD 0.9679
25000 : USD 0.954

Specifications

   
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Maximum Operating Temperature
Series
Qualification
Packaging
Repetitive Reverse Voltage Vrrm Max
Reverse Recovery Time Trr Max
Diode Case Style
No Of Pins
Msl
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RF2001NS3DFHTL from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RF2001NS3DFHTL and other electronic components in the Rectifiers category and beyond.

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Additional Infomation About Product

Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RF2001NS3DFH Series Dimensions (Unit : mm) Land size figure (Unit : mm) Standard Fast Recovery RF2001 Applications NS3D General rectification Features 1)Ultra low switching loss 2)High current overload capacity Structure 3)Cathode common dual type ROHM : LPDS JEITA : TO263S Construction Manufacture Year, Week and Day Silicon epitaxial planer Taping dimensions (Unit : mm) Absolute maximum ratings (Tc=25 C) Parameter Conditions Symbol Limits Unit Repetitive peak reverse voltage V Duty0.5 350 V RM V Reverse voltage Direct voltage 300 V R 60Hz half sin wave resistive load , 20 A Average rectified forward current Io Tc=90C 1/2 Io per diode 60Hz half sin wave, Non-repetitive 100 A I Forward current surge peak FSM one cycle peak value, Tj=25C Junction temperature Tj 150 C Storage temperature Tstg C 55 to 150 Electrical characteristics (Tj=25 C, per diode) Parameter Conditions Symbol Min. Typ. Max. Unit V I =10A Forward voltage 1.2 1.3 V F F Reverse current I V =300V R 0.03 10 A R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 17 25 ns F R R Thermal resistance junction to case Rth(j-c) 2 C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/4Data Sheet RF2001NS3DFH 100 100000 Tj=150 C 10000 Tj=125 C 10 Tj=125 C 1000 Tj=150 C Tj=25 C 100 Tj=75 C Tj=25 C 1 Tj=75 C 10 per diode per diode 0.1 1 0 500 1000 1500 2000 0 50 100 150 200 250 300 FORWARD VOLTAGEV (mV) REVERSE VOLTAGEV (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1300 I =10A F f=1MHz Tj=25 C per diode 1250 per diode 1200 100 1150 AVE:1163mV 1100 1050 10 1000 0 5 10 15 20 25 30 REVERSE VOLTAGE:V (V) V DISPERSION MAP R F V -Ct CHARACTERISTICS R 100 240 f=1MHz V =300V R V =0V R Tj=25 C Tj=25 C per diode per diode 220 AVE:46.7nA 10 200 AVE:207.8pF 1 180 Ct DISPERSION MAP I DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 2/4 CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) FORWARD CURRENT:I (A) R F TERMINALS:Ct(pF) CAPACITANCE BETWEEN FORWARD VOLTAGE:V (mV) F TERMINALS:Ct(pF) REVERSE CURRENT:I (nA) R

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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